公开(公告)号：US12125618B2

公开(公告)日：2024-10-22

申请号：US17769311

申请日：2020-09-24

申请人： KOA CORPORATION

发明人： Yasushi Akahane ,  Nobuhiko Tamada

IPC分类号： H01C17/00 ,  C25D3/56 ,  C25D5/12 ,  C25D7/06 ,  C25D21/12 ,  H01C1/032 ,  H01C1/142 ,  H01C17/242

CPC分类号： H01C17/006 ,  C25D3/562 ,  C25D5/12 ,  C25D7/0642 ,  C25D21/12 ,  H01C1/032 ,  H01C1/142 ,  H01C17/242

摘要： A chip component 10 comprises: an insulating substrate 1 on which a resistor 3 serving as a functional element is formed; a pair of internal electrodes (front electrodes 2, end surface electrodes 6, and back electrodes 5) that is formed to cover both end portions of the insulating substrate 1 and connected to the resistor 3; a barrier layer 8 that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer 9 that is formed on a surface of the barrier layer 8 and mainly composed of tin, and the barrier layer 8 is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content rate of phosphorus in the alloy plating of an inner region is made different from that of an outer region so that at least the inner region of the barrier layer 8 has magnetic properties.

公开(公告)号：US12117727B2

公开(公告)日：2024-10-15

申请号：US17646351

申请日：2021-12-29

申请人： Dai Nippon Printing Co., Ltd.

发明人： Hiroki Oka ,  Sachiyo Matsuura ,  Chiaki Hatsuta ,  Chikao Ikenaga ,  Hideyuki Okamoto ,  Masato Ushikusa

IPC分类号： C23C14/04 ,  B21B1/22 ,  C21D6/00 ,  C21D8/02 ,  C22C38/08 ,  C23C14/24 ,  C25D1/04 ,  C25D3/56 ,  G03F7/00 ,  G03F7/20 ,  H10K71/00 ,  H10K50/11 ,  H10K59/00 ,  H10K71/16

CPC分类号： G03F7/0035 ,  B21B1/22 ,  C21D6/001 ,  C21D8/0247 ,  C22C38/08 ,  C23C14/042 ,  C23C14/24 ,  C25D1/04 ,  C25D3/562 ,  G03F7/0015 ,  G03F7/0027 ,  G03F7/2008 ,  G03F7/2022 ,  H10K71/00 ,  H10K50/11 ,  H10K59/00 ,  H10K71/166

摘要： The metal plate includes a plurality of pits located on the surface of the metal plate. The manufacturing method for a metal plate for use in manufacturing of a deposition mask includes an inspection step of determining a quality of the metal plate based on a sum of volumes of a plurality of pits located at a portion of the surface of the metal plate.

公开(公告)号：US12076965B2

公开(公告)日：2024-09-03

申请号：US16346843

申请日：2017-11-02

申请人： MODUMETAL, INC.

发明人： Christina A. Lomasney

IPC分类号： B32B3/12 ,  B32B15/01 ,  C23C18/16 ,  C23C28/02 ,  C25D3/56 ,  C25D5/00 ,  C25D5/10 ,  C25D5/18

CPC分类号： B32B3/12 ,  C23C18/1644 ,  C23C28/021 ,  C25D3/562 ,  C25D5/10 ,  C25D5/18 ,  C25D5/605 ,  C25D5/611 ,  C25D5/617 ,  C25D5/619 ,  C25D5/627 ,  B32B15/01

摘要： The present disclosure provides articles comprising a laminate material having a void volume of at least 40%, having a lattice structure comprising a plurality of interconnected struts forming polyhedrons in a series that extends in three dimensions, or both, where the laminate materials have an interface density of at least 2.0 interfaces/micrometer (μm). Also described are methods for forming the same.

公开(公告)号：US20240222732A1

公开(公告)日：2024-07-04

申请号：US18289053

申请日：2022-08-25

申请人： GUANGDONG BRUNP RECYCLING TECHNOLOGY CO., LTD. ,  HUNAN BRUNP RECYCLING TECHNOLOGY CO., LTD. ,  HUNAN BRUNP EV RECYCLING CO., LTD.

发明人： Haijun YU ,  Yinghao XIE ,  Aixia LI ,  Xuemei ZHANG ,  Changdong LI

IPC分类号： H01M10/54 ,  C25D3/56 ,  C25D5/50 ,  C25D7/06 ,  C25D21/12 ,  C25D21/18

CPC分类号： H01M10/54 ,  C25D3/562 ,  C25D5/50 ,  C25D7/0614 ,  C25D21/12 ,  C25D21/18

摘要： A method for preparing a copper-based anode material from a waste battery includes the following steps: (1) disassembling a waste battery and taking out an anode plate; (2) using the anode plate in step (1) as an anode and taking a copper foil current collector as a cathode, and placing the anode and the cathode in an electroplating solution for electroplating; (3) after the electroplating is completed, collecting anode powder separated from the anode and soaking the copper foil current collector in an acid solution; (4) washing and drying the soaked copper foil current collector; and (5) calcinating the copper foil current collector to obtain a copper-base anode material.

公开(公告)号：US11981108B2

公开(公告)日：2024-05-14

申请号：US17796643

申请日：2021-03-01

申请人： NIPPON STEEL CORPORATION

发明人： Yasuto Goto ,  Kiyokazu Ishizuka ,  Tatsuo Nagata ,  Katsumasa Matsumoto

IPC分类号： B32B15/01 ,  C22C19/03 ,  C25D3/56 ,  C25D5/50

CPC分类号： B32B15/015 ,  C22C19/03 ,  C25D3/562 ,  C25D5/50 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12951

摘要： A Ni-plated steel sheet according to one aspect of the present invention includes a base steel sheet; and a Ni plating layer provided on a surface of the base steel sheet, wherein the Ni plating layer includes a Ni—Fe alloy layer formed on the surface of the base steel sheet, and a ratio of a Sn content to a Ni content in the Ni plating layer is 0.0005% to 0.10%.

公开(公告)号：US20240026496A1

公开(公告)日：2024-01-25

申请号：US18476663

申请日：2023-09-28

申请人： Korea University Research and Business Foundation

发明人： Young Keun KIM ,  Eun Min YOO ,  Jun Hwan MOON ,  Yoo Sang JEON

IPC分类号： C22C19/07 ,  C25D3/56 ,  C25D5/50

CPC分类号： C22C19/07 ,  C25D3/562 ,  C25D5/50 ,  B82Y30/00

摘要： Disclosed are a cobalt-tungsten alloy and a method of fabricating the same. More particularly, cobalt-tungsten alloy nanowires according to an embodiment are formed using an electroplating method, a grain structure of the cobalt-tungsten alloy nanowires is controlled according to the content of tungsten, and the electrical resistivity of the cobalt-tungsten alloy nanowires can be reduced through annealing.

公开(公告)号：US20230366116A1

公开(公告)日：2023-11-16

申请号：US18138354

申请日：2023-04-24

申请人： UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

发明人： Yang YANG ,  Kyle MARCUS ,  Kun LIANG

IPC分类号： C25D3/56 ,  C25D3/12 ,  C25D3/20 ,  C25D11/34 ,  H01G11/26 ,  H01G11/30 ,  H01G11/86 ,  H01M4/04 ,  H01M4/36 ,  H01M4/58 ,  H01M10/0525 ,  C25D1/04 ,  C25D3/18

CPC分类号： C25D3/562 ,  C25D3/12 ,  C25D3/20 ,  C25D11/34 ,  H01G11/26 ,  H01G11/30 ,  H01G11/86 ,  H01M4/0452 ,  H01M4/364 ,  H01M4/5815 ,  H01M10/0525 ,  C25D1/04 ,  C25D3/18 ,  H01M2004/021

摘要： A process is provided comprising submerging a substrate in an electrochemical deposit bath having at least a metal salt and saccharin. In embodiments, the film is further treated with anodization, and in other cases chemical vapor deposition. Films are also provided formed by the disclosed processes. The films are nanoporous on at least a portion of a surface of the films. Also disclosed are electronic devices having the films disclosed, including lithium-ion batteries, storage devices, supercapacitors, electrodes, semiconductors, fuel cells, and/or combinations thereof.

公开(公告)号：US20190088608A1

公开(公告)日：2019-03-21

申请号：US15954254

申请日：2018-04-16

申请人： Texas Instruments Incorporated

发明人： Nazila Dadvand ,  Salvatore Frank Pavone ,  Christopher Daniel Manack

IPC分类号： H01L23/00 ,  C25D5/12

CPC分类号： H01L24/11 ,  C25D3/30 ,  C25D3/38 ,  C25D3/56 ,  C25D3/562 ,  C25D3/60 ,  C25D5/022 ,  C25D5/10 ,  C25D5/12 ,  C25D5/18 ,  C25D5/505 ,  C25D7/00 ,  C25D7/123 ,  H01L21/288 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05096 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13284 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13639 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1368 ,  H01L2224/13684 ,  H01L2224/13693 ,  H01L2224/16245 ,  H01L2224/16503 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01042 ,  H01L2924/01027 ,  H01L2924/01028

摘要： A microelectronic device includes a reflow structure. The reflow structure has a copper-containing member and a solder member, and a barrier layer between them. The barrier layer has metal grains, with a diffusion barrier filler between the metal grains. The metal grains include at least a first metal and a second metal, each selected from nickel, cobalt, lanthanum, and cerium, with each having a concentration in the metal grains of at least 10 weight percent. The diffusion barrier filler includes at least a third metal, selected from tungsten and molybdenum. A combined concentration of tungsten and molybdenum in the diffusion barrier filler is higher than in the metal grains to provide a desired resistance to diffusion of copper. The barrier layer includes 2 weight percent to 15 weight percent of the combined concentration of tungsten, and molybdenum. A bump bond structure and a lead frame package are disclosed.

公开(公告)号：US20180063950A1

公开(公告)日：2018-03-01

申请号：US15799591

申请日：2017-10-31

申请人： JX NIPPON MINING & METALS CORPORATION

发明人： Michiya KOHIKI

IPC分类号： H05K1/09 ,  H05K3/42 ,  H05K3/40 ,  H05K3/02

CPC分类号： H05K1/09 ,  C23C18/1653 ,  C25D1/04 ,  C25D3/04 ,  C25D3/18 ,  C25D3/38 ,  C25D3/562 ,  C25D5/14 ,  C25D7/0614 ,  H05K3/0058 ,  H05K3/025 ,  H05K3/205 ,  H05K3/4007 ,  H05K3/421 ,  H05K2201/0355 ,  H05K2201/0367 ,  H05K2201/0376 ,  H05K2201/09509 ,  H05K2203/0152 ,  H05K2203/0156 ,  H05K2203/0307 ,  H05K2203/0723 ,  H05K2203/0726

摘要： Provided is a copper foil provided with a carrier in which the laser hole-opening properties of the ultrathin copper layer are good and which is suitable for producing a high-density integrated circuit substrate. A copper foil provided with a carrier having, in order, a carrier, an intermediate layer, and an ultrathin copper layer, wherein the specular gloss at 60° in an MD direction of the intermediate layer side surface of the ultrathin copper layer is 140 or less.

公开(公告)号：US20170113274A1

公开(公告)日：2017-04-27

申请号：US15128919

申请日：2015-03-24

申请人： SANDVIK INTELLECTUAL PROPERTY AB

发明人： Tomas BERGLUND ,  Jouni WEDENSTRAND

IPC分类号： B22F3/15 ,  B22F3/12 ,  C22C19/03 ,  F01D5/14 ,  C23F1/28 ,  C23F15/00 ,  B05B17/00 ,  F16K25/04 ,  B22F3/24 ,  C25D3/56

CPC分类号： B22F3/15 ,  B05B17/00 ,  B22F3/1266 ,  B22F3/1291 ,  B22F3/24 ,  B22F5/10 ,  B22F2003/241 ,  B22F2005/103 ,  B22F2301/15 ,  B22F2301/35 ,  C22C19/03 ,  C23F1/28 ,  C23F15/00 ,  C25D3/562 ,  F01D5/147 ,  F16K25/04

摘要： A method for manufacturing a metallic component includes the steps of providing a component preform of a metallic material, which constitutes the metallic component and a shaping means which defines the shape of the metallic component. The component preform is subjected to Hot Isostatic Pressing for a predetermined time at a predetermined temperature and a predetermined pressure. The shaping means is removed by contacting the component preform with a pickling agent. The step of providing the component preform includes providing the component preform with an acid resistant metal layer, wherein the acid resistant metal layer is applied with electroplating and wherein the acid resistant metal layer is arranged such that it protects the metallic material from contact with the pickling agent.