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公开(公告)号：US08385378B2
公开(公告)日：2013-02-26
申请号：US13608115
申请日：2012-09-10
Applicant: Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul Soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul Soo Kim , Mijin Kim
IPC: H01S5/00
CPC classification number: B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
Abstract translation: 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。
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公开(公告)号：US08125706B2
公开(公告)日：2012-02-28
申请号：US12402627
申请日：2009-03-12
Applicant: Igor Vurgaftman , Jerry R Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC: H01S3/00
CPC classification number: B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
Abstract: A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well; (2) the hole injector includes two or more GaSb hole wells having thicknesses in a specified range; (3) the electron and hole injectors are separated by a thick AlSb barrier to suppress interband absorption; (4) a first electron barrier of the hole injector region separating the hole injector region from an adjacent active quantum well region has a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states to not more than 5%; (5) the thickness of the first InAs electron well in the electron injector, as well as the total thickness of the electron injector, is reduced; (6) the number of cascaded stages is reduced; (7) transition regions are inserted at the interfaces between the various regions of the gain medium so as to smooth out abrupt shifts of the conduction-band minimum; (8) thick separate confinement layers comprising Ga(InAlAs)Sb are disposed between the active gain region and the cladding to confine the optical mode and increase its overlap with the active stages; and (9) the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AlSb SL cladding layers. An interband cascade laser, an interband cascade amplifier, or an external cavity laser employing a gain medium having these features can emit at a wavelength of about 2.5 μm to about 8 μm at high temperatures.
Abstract translation: 提出了增益介质和带间级联激光器，带间级联放大器和具有增益介质的外腔激光器。 增益介质可以包括以下特征中的一个或多个：（1）有源量子阱区域包括厚和富InGaInSb孔; （2）孔喷射器包括厚度在规定范围内的两个以上的GaSb孔穴; （3）电子和空穴注入器被厚的AlSb屏障隔开，以抑制带间吸收; （4）将空穴注入器区域与相邻的有源量子阱区域分离的空穴注入器区域的第一电子势垒具有足以降低区中心活性电子量子阱和喷射器孔状态之间的波函数重叠的平方的厚度， 不超过5％; （5）电子注入器中的第一InAs电子阱的厚度以及电子注入器的总厚度减小; （6）级联级数减少; （7）过渡区域插入在增益介质的各个区域之间的界面处，以平滑导带最小值的突变; （8）包含Ga（InAlAs）Sb的厚的分离的约束层设置在有源增益区和包层之间以限制光学模式并增加其与有源级的重叠; 并且（9）优化包层的掺杂分布，以最小化光学模式与InAs / AlSb SL包覆层的最重掺杂部分的重叠。 带间级联激光器，带间级联放大器或采用具有这些特征的增益介质的外腔激光器可以在高温下以约2.5μm至约8μm的波长发射。
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公开(公告)号：US08290011B2
公开(公告)日：2012-10-16
申请号：US13023656
申请日：2011-02-09
Applicant: Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC: H01S5/00
CPC classification number: B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
Abstract translation: 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。
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公开(公告)号：US08493654B2
公开(公告)日：2013-07-23
申请号：US13353770
申请日：2012-01-19
Applicant: Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC: H01S5/30
CPC classification number: B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
Abstract: An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.
Abstract translation: 提供了一个带间级联增益介质。 所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有 总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度 ，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。
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公开(公告)号：US20130003770A1
公开(公告)日：2013-01-03
申请号：US13608115
申请日：2012-09-10
Applicant: Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
CPC classification number: B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
Abstract translation: 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。
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Patent Agency Ranking
公开(公告)号：US20120127564A1
公开(公告)日：2012-05-24
申请号：US13353770
申请日：2012-01-19
Applicant: Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
CPC classification number: B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
Abstract: An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.
Abstract translation: 提供了一个带间级联增益介质。 所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有 总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度 ，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。
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公开(公告)号：US5459321A
公开(公告)日：1995-10-17
申请号：US638116
申请日：1990-12-26
Applicant: Filbert J. Bartoli , Craig A. Hoffman , Jerry R. Meyer , James R. Lindle
Inventor： Filbert J. Bartoli , Craig A. Hoffman , Jerry R. Meyer , James R. Lindle
Abstract: A protective layer laser hardens an optical detector. The material for therotective layer is Hg.sub.1-Y Cd.sub.Y Te, where Y is selected so that the band gap of the protective layer is higher than the expected energy level for photons impinging on the protective layer. Photons with energy levels lower than the band gap are transmitted by the protective layer while photons exceeding the band gap energy level are absorbed or reflected by the protective layer. A semiconductor junction can be formed on the opposite side of the substrate from a Hg.sub.X Cd.sub.X Te layer with a band gap lower than the expected energy level, so that photons transmitted through the substrate are absorbed in the Hg.sub.X Cd.sub.X Te layer and, therefore, detected at the junction. At sufficiently high intensities where detector damage could result, the protective layer switches so that the incident photons are either absorbed or reflected, thus protecting the detector from damage.
Abstract translation: 保护层激光器硬化光学检测器。 用于保护层的材料是Hg1-YCdYTe，其中选择Y，使得保护层的带隙高于撞击保护层的光子的预期能量水平。 能量水平低于带隙的光子被保护层传输，而超过带隙能级的光子被保护层吸收或反射。 可以在衬底的相对侧上形成具有低于期望能级的带隙的HgXCdXTe层的衬底的相对侧，使得透过衬底的光子被吸收在HgXCdXTe层中，因此在结处被检测。 在可能导致检测器损坏的足够高的强度下，保护层切换，使得入射的光子被吸收或反射，从而保护探测器免受损坏。
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公开(公告)号：US20120128018A1
公开(公告)日：2012-05-24
申请号：US13023656
申请日：2011-02-09
Applicant: Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
Inventor： Igor Vurgaftman , Jerry R. Meyer , Chadwick L. Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
CPC classification number: B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
Abstract translation: 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。
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公开(公告)号：US20110215705A1
公开(公告)日：2011-09-08
申请号：US12717989
申请日：2010-03-05
Applicant: James Peter Long , Chul-soo Kim , James R. Lindle , Jerry R. Meyer , Igor Vurgaftman
Inventor： James Peter Long , Chul-soo Kim , James R. Lindle , Jerry R. Meyer , Igor Vurgaftman
IPC: H01J61/28
CPC classification number: H01J61/28 , G02B6/1226
Abstract: A surface plasmon polariton device that may be integrated onto a single microchip is disclosed. The device employs a laser that emits polarized light across a gap into a plasmonic waveguide. Surface plasmon polaritons are thereby created in an efficient matter. The device provides a source of surface plasmon polaritons at near infrared wavelengths in an integrated package.
Abstract translation: 公开了可集成在单个微芯片上的表面等离子体激元器件。 该器件采用将跨越间隙的偏振光发射到等离子体激元波导中的激光器。 因此，在有效的物质中产生表面等离子体激元极化子。 该器件在集成封装中提供近红外波长的表面等离子体激元的源。
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公开(公告)号：US5805326A
公开(公告)日：1998-09-08
申请号：US239068
申请日：1994-05-06
Applicant: Arthur W. Snow , James S. Shirk , Filbert J. Bartoli, Jr. , James R. Lindle , Michael E. Boyle , Richard G. S. Pong , Steven R. Flom , Joseph F. Pinto
Inventor： Arthur W. Snow , James S. Shirk , Filbert J. Bartoli, Jr. , James R. Lindle , Michael E. Boyle , Richard G. S. Pong , Steven R. Flom , Joseph F. Pinto
CPC classification number: G02F1/3551 , G02B26/02 , G02F1/3523
Abstract: An optical limiter structure which includes a limiter material preferably dissolved in a host. The limiter material is selected from substituted and unsubstituted phthalocyanines, naphthalocyanines, porphyrins, salts of these materials and mixtures thereof, whereas the host is selected from any material which can dissolve the limiter material to at least the extent of 0.1% by weight.
Abstract translation: 一种光学限制器结构，其包括优选地溶解在主体中的限制器材料。 限制剂材料选自取代和未取代的酞菁，萘酞菁，卟啉，这些材料的盐及其混合物，而主体选自能够将限制剂材料溶解至少达到0.1重量％程度的任何材料。
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