nvSRAM with inverted recall
    2.
    发明授权
    nvSRAM with inverted recall 有权
    nvSRAM与倒置回忆

    公开(公告)号:US08467243B1

    公开(公告)日:2013-06-18

    申请号:US12888737

    申请日:2010-09-23

    CPC classification number: G11C11/4125 G11C14/0081

    Abstract: A process of operating a memory circuit involves RECALLing a state of a volatile memory cell from a nonvolatile memory cell, and inverting an output of the volatile memory cell after every other RECALL.

    Abstract translation: 操作存储器电路的过程涉及从非易失性存储单元回收易失性存储器单元的状态,并且在每隔一个RECALL之后反转易失性存储器单元的输出。

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