公开(公告)号：US5236852A

公开(公告)日：1993-08-17

申请号：US950333

申请日：1992-09-24

申请人： Michael Cherniawski ,  Jeffrey M. Barker ,  Ronald E. Pyle ,  Vidya S. Kaushik

发明人： Michael Cherniawski ,  Jeffrey M. Barker ,  Ronald E. Pyle ,  Vidya S. Kaushik

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/768 ,  H01L23/485

CPC分类号： H01L23/485 ,  H01L21/76838 ,  H01L2924/0002 ,  Y10S148/019

摘要： An electrical contact (46) to a phosphorous doped polysilicon gate electrode (18) is formed by preventing arsenic, from a source and drain implant, from doping a portion (22) of the polysilicon gate electrode (18). A photoresist mask (20) covers a portion (22) of the polysilicon gate electrode (18) during the implant, thus preventing it from being doped. An electrical contact (46) is then formed to the masked portion (22) of the polysilicon gate electrode (18).