公开(公告)号：US06448182B1

公开(公告)日：2002-09-10

申请号：US09447172

申请日：1999-11-22

申请人： Lindsey Hall ,  Jennifer Sees ,  Ashutosh Misra

发明人： Lindsey Hall ,  Jennifer Sees ,  Ashutosh Misra

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09K3/1463

摘要： An embodiment of the instant invention is a method of fabricating an electrical device having a structure overlying a semiconductor substrate which is planarized using chemical mechanical planarization, the method comprising the steps of: forming a layer of material over the semiconductor wafer; polishing the layer of material by subjecting it to a polishing pad and a slurry which includes peroxygen; and wherein the slurry additionally includes a stabilizing agent which retards the decomposition of the peroxygen in the slurry. Preferably, the stabilizing agent is comprised of: pyrophosphoric acids, polyphosphonic acids, polyphosphoric acids, Ethylenediamine Tetraacetic acid, a salt of the pyrophosphoric acids, a salt of the polyphosphonic acids, a salt of the polyphosphoric acids, a salt of the Ethylenediamine Tetraacetic acid and any combination thereof. In addition, the stabilizing agent may be comprised of: sodium pyrophosphate decahydrate, sodium pyrophosphate decahydrate, and/or 8-hydroxyquinoline. The decomposition of the peroxygen in the slurry is catalyzed by transition metals included in the slurry, and may be caused by the pH of the slurry. The layer of material is, preferably, comprised of: tungsten, copper, aluminum, a dielectric material, and any combination thereof.

摘要翻译： 本发明的一个实施例是制造具有覆盖半导体衬底的结构的电子器件的方法，其使用化学机械平面化进行平面化，所述方法包括以下步骤：在半导体晶片上形成材料层; 通过使抛光垫和包括过氧化物的浆料进行抛光来抛光材料层; 并且其中所述浆料另外包括阻止所述浆料中过氧化物分解的稳定剂。 优选地，稳定剂包括：焦磷酸，多膦酸，多磷酸，乙二胺四乙酸，焦磷酸盐，多膦酸的盐，多磷酸的盐，乙二胺四乙酸的盐 及其任何组合。 此外，稳定剂可以包括：十水合焦磷酸钠，十水合焦磷酸钠和/或8-羟基喹啉。 浆料中过氧化物的分解由包含在浆料中的过渡金属催化，并且可能由浆料的pH引起。 材料层优选地包括：钨，铜，铝，介电材料及其任何组合。

公开(公告)号：US6145372A

公开(公告)日：2000-11-14

申请号：US069908

申请日：1998-04-30

申请人： Lindsey H. Hall ,  Jennifer Sees ,  Oliver Chyan

发明人： Lindsey H. Hall ,  Jennifer Sees ,  Oliver Chyan

IPC分类号： G01N27/416 ,  G01N33/00 ,  G01N27/403

CPC分类号： G01N27/4166 ,  G01N2033/0095

摘要： A apparatus and method for monitoring impurities in wet chemicals in semiconductor wafer processing comprising a silicon sensor (12) that is electrically connected to a potentiometer (22), a reference electrode (14) electrically connected to the potentiometer (22), wherein a comparison in the potential between the silicon sensor (12) and the reference electrode (14) to a predetermined baseline is used to measure wet chemical impurities, is disclosed.

摘要翻译： 一种用于监测半导体晶片处理中的湿化学品中的杂质的装置和方法，包括电连接到电位器（22）的硅传感器（12），与电位计（22）电连接的参考电极（14），其中比较 在硅传感器（12）和参考电极（14）之间的电位达到预定的基线用于测量湿化学杂质。