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1.发明授权Systems and methods for implementing an interaction between a laser shaped as line beam and a film deposited on a substrate 有权用于实现激光成形为线束和沉积在基底上的膜之间的相互作用的系统和方法公开(公告)号：US08737438B2
公开(公告)日：2014-05-27
申请号：US13571129
申请日：2012-08-09
IPC分类号： H01S3/10
CPC分类号： B23K26/043 , B23K26/04 , B23K26/0622 , B23K26/0738 , C30B1/023 , C30B13/24
摘要： A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
摘要翻译： 公开了一种激光结晶装置和方法，用于选择性地熔融沉积在基底上的诸如非晶硅的膜。 该装置可以包括用于产生用于熔化膜的拉伸激光脉冲的光学系统。 在本发明实施例的另一方面，提供一种用于拉伸激光脉冲的系统和方法。 在另一方面，提供了一种系统，用于在预定范围内沿着光束路径的位置维持脉冲激光束的发散（拉伸或未拉伸）。 在另一方面，可以提供一种系统，用于在膜与成形线束的相互作用期间将膜处的能量密度保持在预定范围内。
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2.发明授权Systems and methods for implementing an interaction between a laser shaped as line beam and a film deposited on a substrate 有权用于实现激光成形为线束和沉积在基底上的膜之间的相互作用的系统和方法公开(公告)号：US08265109B2
公开(公告)日：2012-09-11
申请号：US12386771
申请日：2009-04-21
IPC分类号： H01S3/10
CPC分类号： B23K26/043 , B23K26/04 , B23K26/0622 , B23K26/0738 , C30B1/023 , C30B13/24
摘要： A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
摘要翻译： 公开了一种激光结晶装置和方法，用于选择性地熔融沉积在基底上的诸如非晶硅的膜。 该装置可以包括用于产生用于熔化膜的拉伸激光脉冲的光学系统。 在本发明实施例的另一方面，提供一种用于拉伸激光脉冲的系统和方法。 在另一方面，提供了一种系统，用于在预定范围内沿着光束路径的位置维持脉冲激光束的发散（拉伸或未拉伸）。 在另一方面，可以提供一种系统，用于在膜与成形线束的相互作用期间将膜处的能量密度保持在预定范围内。
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3.发明申请SYSTEMS AND METHODS FOR IMPLEMENTING AN INTERACTION BETWEEN A LASER SHAPED AS LINE BEAM AND A FILM DEPOSITED ON A SUBSTRATE 有权用于实现激光形成的线束与基板上沉积的膜之间的相互作用的系统和方法公开(公告)号：US20120298838A1
公开(公告)日：2012-11-29
申请号：US13571129
申请日：2012-08-09
IPC分类号： G01J1/16
CPC分类号： B23K26/043 , B23K26/04 , B23K26/0622 , B23K26/0738 , C30B1/023 , C30B13/24
摘要： A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
摘要翻译： 公开了一种激光结晶装置和方法，用于选择性地熔融沉积在基底上的诸如非晶硅的膜。 该装置可以包括用于产生用于熔化膜的拉伸激光脉冲的光学系统。 在本发明实施例的另一方面，提供一种用于拉伸激光脉冲的系统和方法。 在另一方面，提供了一种系统，用于在预定范围内沿着光束路径的位置维持脉冲激光束的发散（拉伸或未拉伸）。 在另一方面，可以提供一种系统，用于在膜与成形线束的相互作用期间将膜处的能量密度保持在预定范围内。
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4.发明申请Systems and methods for implementing an interaction between a laser shaped as line beam and a film deposited on a substrate 有权用于实现激光成形为线束和沉积在基底上的膜之间的相互作用的系统和方法公开(公告)号：US20090256057A1
公开(公告)日：2009-10-15
申请号：US12386771
申请日：2009-04-21
CPC分类号： B23K26/043 , B23K26/04 , B23K26/0622 , B23K26/0738 , C30B1/023 , C30B13/24
摘要： A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
摘要翻译： 公开了一种激光结晶装置和方法，用于选择性地熔融沉积在基底上的诸如非晶硅的膜。 该装置可以包括用于产生用于熔化膜的拉伸激光脉冲的光学系统。 在本发明实施例的另一方面，提供一种用于拉伸激光脉冲的系统和方法。 在另一方面，提供了一种系统，用于在预定范围内沿着光束路径的位置维持脉冲激光束的发散（拉伸或未拉伸）。 在另一方面，可以提供一种系统，用于在膜与成形线束的相互作用期间将膜处的能量密度保持在预定范围内。
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