公开(公告)号：US5438013A

公开(公告)日：1995-08-01

申请号：US112090

申请日：1993-08-26

申请人： Yun-gi Kim ,  Jeung-gil Lee

发明人： Yun-gi Kim ,  Jeung-gil Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/92

摘要： A capacitor of a semiconductor memory device having a greater cell capacitance than a double-cylindrical capacitor and an improved method for manufacturing the same are disclosed. A first conductive layer is formed on a semiconductor substrate and then first and second material layers are formed on the first conductive layer. The first material and second material layers are patterned to form a composite pattern comprised of a precursory first material pattern and a second material pattern. The precursory first material pattern is anisotropically etched to form a first material pattern smaller than the second material pattern. Here, an undercut portion under the second material pattern is created. Then, the first conductive layer is anisotropically and partially etched to form a first conductive layer pattern having a groove defining a protruding stepped portion into an individual cell unit. After forming a first spacer on the sidewall of the first material pattern and a second spacer on the sidewall of the groove, the first conductive layer pattern is anisotropically etched to thereby form a double-cylindrical electrode. A double-cylindrical storage electrode can be simply manufactured so that the cell capacitance of a semiconductor memory device can be reliably enlarged.

摘要翻译： 公开了具有比双圆柱形电容器更大的单元电容的半导体存储器件的电容器及其制造方法。 在半导体衬底上形成第一导电层，然后在第一导电层上形成第一和第二材料层。 将第一材料层和第二材料层图案化以形成由前体第一材料图案和第二材料图案组成的复合图案。 前体第一材料图案被各向异性地蚀刻以形成小于第二材料图案的第一材料图案。 这里，产生第二材料图案下的底切部分。 然后，第一导电层被各向异性地部分地蚀刻以形成具有限定突出阶梯部分的槽的第一导电层图案到单个单元单元中。 在第一材料图案的侧壁上形成第一间隔物和在凹槽的侧壁上的第二间隔物之后，第一导电层图案被各向异性蚀刻从而形成双圆柱形电极。 可以简单地制造双圆柱形存储电极，使得可以可靠地扩大半导体存储器件的单元电容。