公开(公告)号：US08252517B2

公开(公告)日：2012-08-28

申请号：US12503935

申请日：2009-07-16

申请人： Edwin L. Thomas ,  Patrick Seamus Doyle ,  Dhananjay Dendukuri ,  Ji-Hyun Jang ,  Chaitanya K. Ullal

发明人： Edwin L. Thomas ,  Patrick Seamus Doyle ,  Dhananjay Dendukuri ,  Ji-Hyun Jang ,  Chaitanya K. Ullal

IPC分类号： G03F7/20

CPC分类号： G03B27/54 ,  G03F7/027 ,  G03F7/2012 ,  G03F7/2035 ,  G03F7/40

摘要： Stop flow interference lithography system for high throughput synthesis of 3-dimensionally patterned polymer particles. The system includes a microfluidic channel containing a stationary oligomer film and a phase mask located adjacent to the microfluidic channel. A source of collimated light is provided for passing the collimated light through the phase mask and into the microfluidic channel for interaction with the oligomer. The passage of the collimated light through the phase mask generates a 3-dimensional distribution of light intensity to induce crosslinking of the oligomer in high intensity regions thereby forming 3-dimensional structures.

摘要翻译： 停止流动干涉光刻系统，用于三维图案化聚合物颗粒的高通量合成。 该系统包括含有固定低聚物膜的微流体通道和位于微流体通道附近的相位掩模。 提供准直光源以使准直光通过相位掩模并进入微流体通道以与低聚物相互作用。 准直光穿过相位掩模产生光强度的3维分布，以诱导高强度区域中的低聚物的交联，由此形成3维结构。

公开(公告)号：US20100099048A1

公开(公告)日：2010-04-22

申请号：US12503935

申请日：2009-07-16

申请人： Edwin L. Thomas ,  Patrick Seamus Doyle ,  Dhananjay Dendukuri ,  Ji-Hyun Jang ,  Chaitanya K. Ullal

发明人： Edwin L. Thomas ,  Patrick Seamus Doyle ,  Dhananjay Dendukuri ,  Ji-Hyun Jang ,  Chaitanya K. Ullal

IPC分类号： G03F7/20 ,  G03B27/54 ,  G03B27/72

CPC分类号： G03B27/54 ,  G03F7/027 ,  G03F7/2012 ,  G03F7/2035 ,  G03F7/40

摘要： Stop flow interference lithography system for high throughput synthesis of 3-dimensionally patterned polymer particles. The system includes a microfluidic channel containing a stationary oligomer film and a phase mask located adjacent to the microfluidic channel. A source of collimated light is provided for passing the collimated light through the phase mask and into the microfluidic channel for interaction with the oligomer. The passage of the collimated light through the phase mask generates a 3-dimensional distribution of light intensity to induce crosslinking of the oligomer in high intensity regions thereby forming 3-dimensional structures.

摘要翻译： 停止流动干涉光刻系统，用于三维图案化聚合物颗粒的高通量合成。 该系统包括含有固定低聚物膜的微流体通道和位于微流体通道附近的相位掩模。 提供准直光源以使准直光通过相位掩模并进入微流体通道以与低聚物相互作用。 准直光穿过相位掩模产生光强度的3维分布，以诱导高强度区域中的低聚物的交联，由此形成3维结构。

公开(公告)号：US6146811A

公开(公告)日：2000-11-14

申请号：US364860

申请日：1999-07-30

申请人： Jin Baek Kim ,  Jong Jin Park ,  Ji Hyun Jang

发明人： Jin Baek Kim ,  Jong Jin Park ,  Ji Hyun Jang

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC分类号： G03F7/038 ,  G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

摘要： Disclosed is photoresist using dioxaspiro ring-substitued acryl derivatives, represented by the following chemical formula I or II. As matrix polymers, homopolymers of dioxaspiro ring-substitued acryl monomers or their copolymers with acryl monomers are provided. The deprotection of the dioxaspiro rings from the matrix polymers, usually accomplished by the action of a photoacid generator, causes a great change in the water solubility of the matrix, thereby allowing the matrix to be used for the photoresist required to have high sensitivity, resolution and contrast.

摘要翻译： 公开了由以下化学式I或II表示的使用二氧杂环庚烷环取代的丙烯酰基衍生物的光致抗蚀剂。 作为基质聚合物，提供二氧杂螺环环取代的丙烯酸单体的均聚物或其与丙烯酸单体的共聚物。 通常通过光致酸产生剂的作用完成的二氧杂螺环从基质聚合物的脱保护导致基质的水溶性的很大变化，从而允许将基质用于需要具有高灵敏度，分辨率的光致抗蚀剂 和对比度。