-
公开(公告)号：US20130011983A1
公开(公告)日：2013-01-10
申请号：US13178294
申请日：2011-07-07
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/0653 , H01L29/0847 , H01L29/1054 , H01L29/161 , H01L29/167 , H01L29/36 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/66651 , H01L29/66795 , Y10S438/933
摘要： A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the silicon-containing semiconductor region.
-
公开(公告)号：US08962400B2
公开(公告)日：2015-02-24
申请号：US13178294
申请日：2011-07-07
IPC分类号： H01L21/84 , H01L21/8234 , H01L21/336 , H01L29/78 , H01L21/8238 , H01L29/66 , H01L29/10
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/0653 , H01L29/0847 , H01L29/1054 , H01L29/161 , H01L29/167 , H01L29/36 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/66651 , H01L29/66795 , Y10S438/933
摘要： A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the silicon-containing semiconductor region.
摘要翻译： 一种方法包括在半导体区域上形成栅极叠层，并使半导体区域凹陷以形成邻近栅叠层的凹陷。 在凹部中外延生长含硅半导体区域以形成源极/漏极应力源。 在外延生长含硅半导体区域的步骤期间，砷原位被掺杂。
-
公开(公告)号：US20130234203A1
公开(公告)日：2013-09-12
申请号：US13415710
申请日：2012-03-08
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/0886 , H01L29/45 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.
摘要翻译： 公开了半导体器件及其制造方法。 在一个实施例中，制造半导体器件的方法包括在工件中形成沟道区域，以及在沟道区域附近形成源极或漏极区域。 源极或漏极区包括包含SiP，SiA或硅化物的接触电阻降低材料层。 源极或漏极区域还包括包含SiCP或SiCAs的沟道应力材料层。
-
公开(公告)号：US08785285B2
公开(公告)日：2014-07-22
申请号：US13415710
申请日：2012-03-08
IPC分类号： H01L21/336
CPC分类号： H01L27/0886 , H01L29/45 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)