METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号:US20120107979A1

    公开(公告)日:2012-05-03

    申请号:US13280600

    申请日:2011-10-25

    IPC分类号: H01L33/58 H01L33/26

    摘要: A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

    摘要翻译: 公开了一种制造发光器件的方法。 所公开的方法包括在第一衬底上形成第一导电类型半导体层,使得第一导电类型半导体层的第一表面与第一衬底相邻,在第一衬底的第二表面上设置第二衬底, 导电型半导体层与第一表面相对,分离第一衬底,在第一表面上设置第三衬底,分离第二衬底,并在第二表面上形成有源层和第二导电型半导体层。 根据该方法,可以使用相对便宜的基板。 由于在氮化镓半导体层的Ga面上形成半导体层,因此实现了发光效率的提高。

    Method for manufacturing light emitting device having an active layer formed over a Ga-face
    2.
    发明授权
    Method for manufacturing light emitting device having an active layer formed over a Ga-face 有权
    一种制造具有形成在Ga面上的有源层的发光器件的方法

    公开(公告)号:US08741671B2

    公开(公告)日:2014-06-03

    申请号:US13280600

    申请日:2011-10-25

    IPC分类号: H01L33/58 H01L33/26

    摘要: A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

    摘要翻译: 公开了一种制造发光器件的方法。 所公开的方法包括在第一衬底上形成第一导电类型半导体层,使得第一导电类型半导体层的第一表面与第一衬底相邻,在第一衬底的第二表面上设置第二衬底, 导电型半导体层与第一表面相对,分离第一衬底,在第一表面上设置第三衬底,分离第二衬底,并在第二表面上形成有源层和第二导电型半导体层。 根据该方法,可以使用相对便宜的基板。 由于在氮化镓半导体层的Ga面上形成半导体层,因此实现了发光效率的提高。