公开(公告)号：US20120107979A1

公开(公告)日：2012-05-03

申请号：US13280600

申请日：2011-10-25

申请人： JiHyung MOON ,  HwanHee JEONG ,  KwangKi CHOI ,  JuneO SONG ,  SangYoul LEE

发明人： JiHyung MOON ,  HwanHee JEONG ,  KwangKi CHOI ,  JuneO SONG ,  SangYoul LEE

IPC分类号： H01L33/58 ,  H01L33/26

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

摘要翻译： 公开了一种制造发光器件的方法。 所公开的方法包括在第一衬底上形成第一导电类型半导体层，使得第一导电类型半导体层的第一表面与第一衬底相邻，在第一衬底的第二表面上设置第二衬底， 导电型半导体层与第一表面相对，分离第一衬底，在第一表面上设置第三衬底，分离第二衬底，并在第二表面上形成有源层和第二导电型半导体层。 根据该方法，可以使用相对便宜的基板。 由于在氮化镓半导体层的Ga面上形成半导体层，因此实现了发光效率的提高。

公开(公告)号：US20120037945A1

公开(公告)日：2012-02-16

申请号：US13280669

申请日：2011-10-25

申请人： SoJung KIM ,  HwanHee Jeong ,  DukHyun Park ,  JuneO Song ,  KwangKi Choi

发明人： SoJung KIM ,  HwanHee Jeong ,  DukHyun Park ,  JuneO Song ,  KwangKi Choi

IPC分类号： H01L33/60 ,  B82Y99/00

CPC分类号： H01L33/42 ,  H01L33/0079 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a light emitting structure comprising a first semiconductor layer, a substrate, a reflection electrode disposed on the substrate, a light transmitting electrode disposed on the reflection electrode, and a light emitting structure disposed on the light transmitting electrode, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layer. The light transmitting electrode has a thickness of 20 to 200 A.

摘要翻译： 公开了一种发光结构，包括第一半导体层，衬底，设置在衬底上的反射电极，设置在反射电极上的透光电极和设置在透光电极上的发光结构，发光结构包括 第一半导体层，第二半导体层和介于第一和第二半导体层之间的有源层。 透光电极的厚度为20〜200A。

公开(公告)号：US08741671B2

公开(公告)日：2014-06-03

申请号：US13280600

申请日：2011-10-25

申请人： JiHyung Moon ,  HwanHee Jeong ,  KwangKi Choi ,  JuneO Song ,  SangYoul Lee

发明人： JiHyung Moon ,  HwanHee Jeong ,  KwangKi Choi ,  JuneO Song ,  SangYoul Lee

IPC分类号： H01L33/58 ,  H01L33/26

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

摘要翻译： 公开了一种制造发光器件的方法。 所公开的方法包括在第一衬底上形成第一导电类型半导体层，使得第一导电类型半导体层的第一表面与第一衬底相邻，在第一衬底的第二表面上设置第二衬底， 导电型半导体层与第一表面相对，分离第一衬底，在第一表面上设置第三衬底，分离第二衬底，并在第二表面上形成有源层和第二导电型半导体层。 根据该方法，可以使用相对便宜的基板。 由于在氮化镓半导体层的Ga面上形成半导体层，因此实现了发光效率的提高。

公开(公告)号：US08426885B2

公开(公告)日：2013-04-23

申请号：US13283082

申请日：2011-10-27

申请人： SangYoul Lee ,  HwanHee Jeong ,  KwangKi Choi ,  JuneO Song ,  ChungSong Kim

发明人： SangYoul Lee ,  HwanHee Jeong ,  KwangKi Choi ,  JuneO Song ,  ChungSong Kim

IPC分类号： H01L23/00

CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

摘要： Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device.

摘要翻译： 公开了根据本实施例的发光器件，其包括：衬底; 设置在所述基板上的第一电极层; 布置在第一电极层上的发光结构，其包括第一导电半导体层，第二导电半导体层和置于第一和第二导电半导体层之间的有源层; 以及导电层，其包括设置在所述基板下方的基底导电层，在穿过所述基板和所述第一电极层的同时连接到所述基底导电层的主体以及设置在所述第一电极层的顶部上的磁头。 因此，发光器件能够提高光提取效率，并且包括导电层以提供牢固地形成在器件上的载体以及半导体层。

公开(公告)号：US08643045B2

公开(公告)日：2014-02-04

申请号：US13280669

申请日：2011-10-25

申请人： SoJung Kim ,  HwanHee Jeong ,  DukHyun Park ,  JuneO Song ,  KwangKi Choi

发明人： SoJung Kim ,  HwanHee Jeong ,  DukHyun Park ,  JuneO Song ,  KwangKi Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0079 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a light emitting structure comprising a first semiconductor layer, a substrate, a reflection electrode disposed on the substrate, a light transmitting electrode disposed on the reflection electrode, and a light emitting structure disposed on the light transmitting electrode, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layer. The light transmitting electrode has a thickness of 20 to 200 Å.

摘要翻译： 公开了一种发光结构，包括第一半导体层，衬底，设置在衬底上的反射电极，设置在反射电极上的透光电极和设置在透光电极上的发光结构，发光结构包括 第一半导体层，第二半导体层和介于第一和第二半导体层之间的有源层。 透光电极的厚度为20〜200。

公开(公告)号：US20120068215A1

公开(公告)日：2012-03-22

申请号：US13284124

申请日：2011-10-28

申请人： SangYoul LEE ,  JuneO SONG ,  KwangKi CHOI ,  HwanHee JEONG ,  HyeYoung KIM

发明人： SangYoul LEE ,  JuneO SONG ,  KwangKi CHOI ,  HwanHee JEONG ,  HyeYoung KIM

IPC分类号： H01L33/50

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： A light emitting device is provided. According to an embodiment, the light emitting device includes a first layer to diffuse first light emitted from the active layer, and a second layer to convert the diffused first light into second light having a different wavelength than the first light. Accordingly, it may be possible to diffuse first light emitted from the light emitting structure and to wavelength-convert the first light into second light because the conversion layer including the first and second layers is disposed on the light emitting structure.

摘要翻译： 提供了一种发光器件。 根据实施例，发光器件包括用于扩散从有源层发射的第一光的第一层和将扩散的第一光转换成具有与第一光不同的波长的第二光的第二层。 因此，由于将包括第一层和第二层的转换层设置在发光结构上，可以扩散从发光结构发射的第一光并将第一光波长转换为第二光。

公开(公告)号：US20120043574A1

公开(公告)日：2012-02-23

申请号：US13283082

申请日：2011-10-27

申请人： SangYoul LEE ,  HwanHee JEONG ,  KwangKi CHOI ,  JuneO SONG ,  ChungSong KIM

发明人： SangYoul LEE ,  HwanHee JEONG ,  KwangKi CHOI ,  JuneO SONG ,  ChungSong KIM

IPC分类号： H01L33/60 ,  H01L33/52

CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

摘要： Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device.

摘要翻译： 公开了根据本实施例的发光器件，其包括：衬底; 设置在所述基板上的第一电极层; 布置在第一电极层上的发光结构，其包括第一导电半导体层，第二导电半导体层和置于第一和第二导电半导体层之间的有源层; 以及导电层，其包括设置在所述基板下方的基底导电层，在穿过所述基板和所述第一电极层的同时连接到所述基底导电层的主体以及设置在所述第一电极层的顶部上的磁头。 因此，发光器件能够提高光提取效率，并且包括导电层以提供牢固地形成在器件上的载体以及半导体层。