摘要:
A method for making contact landing pad structures in a semiconductor integrated circuit device includes forming an isolation region and forming active regions in the semiconductor substrate. The active regions are separated by the isolation region, and each of the active regions includes one or more contact regions. The method includes forming a raised structure overlying the isolation region and disposed between a first and second contact regions. The method includes depositing a cap layer and forming an interlayer dielectric layer overlying the cap layer. The method includes depositing a photoresist layer overlying the interlayer dielectric layer and uses a mask pattern to selectively remove a portion of the photoresist layer to form a line type opening, which exposes a portion of the interlayer dielectric layer overlying at least the first and second contact regions. The method deposits a conductive fill material and performs a planarization process to form multiple conductive landing contact pads.
摘要:
A method for making contact landing pad structures in a semiconductor integrated circuit device. The method includes forming an isolation region and forming active regions in the semiconductor substrate. The active regions are separated by the isolation region, and each of the active regions includes one or more contact regions. The method includes forming a raised structure between a first and second contact regions. The raised structure overlying the isolation region. The method includes depositing a cap layer and forming an interlayer dielectric layer overlying the cap layer. The method uses a mask pattern to selectively remove a portion of the photoresist layer to form a line type opening, which exposes a portion of the interlayer dielectric layer overlying at least the first and second contact regions. The method deposits a conductive fill material and performs a planarization process, whereby a plurality of conductive landing contact pads are formed.