公开(公告)号：US08685840B2

公开(公告)日：2014-04-01

申请号：US13313124

申请日：2011-12-07

申请人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

发明人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

IPC分类号： H01L21/322

CPC分类号： H01L21/3221

摘要： An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.

摘要翻译： 在反应室中连续进行用于从升级的冶金级硅晶片的表面和内部除去杂质的原位吸气方法。 氯化物气与载气混合。 气态混合物用于清洁硅晶片的表面。 然后，在执行热退火之前，气态混合物用于在硅晶片的表面上形成多孔结构。 最后，气态混合物用于在硅晶片的表面上执行热蚀刻，并从硅晶片的表面去除多孔结构。 由于氯化物气体用于清洁硅晶片的表面，并且在硅晶片的表面上形成多孔结构，所以外部吸气性得到改善。 此外，有效地从硅晶片的内部除去间隙型金属杂质。

公开(公告)号：US20130149843A1

公开(公告)日：2013-06-13

申请号：US13313124

申请日：2011-12-07

申请人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

发明人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

IPC分类号： H01L21/322

CPC分类号： H01L21/3221

摘要： An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.

摘要翻译： 在反应室中连续进行用于从升级的冶金级硅晶片的表面和内部除去杂质的原位吸气方法。 氯化物气与载气混合。 气态混合物用于清洁硅晶片的表面。 然后，在执行热退火之前，气态混合物用于在硅晶片的表面上形成多孔结构。 最后，气态混合物用于在硅晶片的表面上执行热蚀刻，并从硅晶片的表面去除多孔结构。 由于氯化物气体用于清洁硅晶片的表面，并且在硅晶片的表面上形成多孔结构，所以外部吸气性得到改善。 此外，有效地从硅晶片的内部除去间隙型金属杂质。