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    Method for making an anti-reflection film of a solar cell
    2.
    发明申请
    Method for making an anti-reflection film of a solar cell 有权
    制造太阳能电池防反射膜的方法

    公开(公告)号：US20100279453A1

    公开(公告)日：2010-11-04

    申请号：US12007156

    申请日：2008-01-07

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02168 ,  C23C16/36 ,  C23C16/505 ,  C23C16/56 ,  Y02E10/50

    摘要： A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p− type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p− type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.

    摘要翻译： 公开了制造太阳能电池的防反射膜的方法。 该方法包括提供层压体的步骤。 层压体包括陶瓷基板，钛基复合膜，p +型多晶硅背面场，p型多晶硅均热膜和n +型多晶硅发射体。 在等离子体增强气相沉积装置中，用SiCNO：Ar等离子体钝化层压体，从而填充n +型多晶硅发射体表面的硅原子的悬挂键，晶界处的硅晶粒的悬挂键 的p型多晶硅均热膜和p +型多晶硅表面场中的硅原子的悬挂键。 最后，n +型多晶硅发射体涂覆有SiCN / SiO2的防反射膜。

    Method for making a silicon quantum dot fluorescent lamp
    3.
    发明申请
    Method for making a silicon quantum dot fluorescent lamp 有权
    硅量子点荧光灯的制造方法

    公开(公告)号：US20100255747A1

    公开(公告)日：2010-10-07

    申请号：US11976444

    申请日：2007-10-24

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    IPC分类号： H01J9/00

    CPC分类号： H01J63/06 ,  H01J63/04

    摘要： A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

    摘要翻译： 通过在阴极组件和阳极组件之间提供高电压源来制造硅量子点荧光灯。 阴极组件通过提供第一衬底，在第一衬底上涂覆缓冲层，在缓冲层上涂覆催化层并在催化层上提供多个纳米放电元件来制造。 阳极组件通过提供第二衬底制造，在第二衬底上涂覆硅量子点荧光膜并在硅量子点荧光膜上涂覆金属膜。

    Method for making a silicon quantum dot fluorescent lamp
    5.
    发明授权
    Method for making a silicon quantum dot fluorescent lamp 有权
    硅量子点荧光灯的制造方法

    公开(公告)号：US07896723B2

    公开(公告)日：2011-03-01

    申请号：US11976444

    申请日：2007-10-24

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    IPC分类号： H01J9/00

    CPC分类号： H01J63/06 ,  H01J63/04

    摘要： A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

    摘要翻译： 通过在阴极组件和阳极组件之间提供高电压源来制造硅量子点荧光灯。 阴极组件通过提供第一衬底，在第一衬底上涂覆缓冲层，在缓冲层上涂覆催化层并在催化层上提供多个纳米放电元件来制造。 阳极组件通过提供第二衬底制造，在第二衬底上涂覆硅量子点荧光膜并在硅量子点荧光膜上涂覆金属膜。

    Process for making multi-crystalline silicon thin-film solar cells
    7.
    发明申请
    Process for making multi-crystalline silicon thin-film solar cells 有权
    制造多晶硅薄膜太阳能电池的工艺

    公开(公告)号：US20110003425A1

    公开(公告)日：2011-01-06

    申请号：US12007154

    申请日：2008-01-07

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02168 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p− type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p− type light-soaking film to form an n+ type emitter. Thus, an n+-p−-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p−-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p−-p+ laminate is etched in a patterned mask process. A p− type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n− type ohmic contact is formed on the n+ type emitter.

    摘要翻译： 将二氯硅烷和乙硼烷沉积在钛基合金膜上以生长p +型背表面场膜。 升高温度以在p +型背表面场膜上生长p型光均热膜。 磷化氢沉积在p型光浸膜上以形成n +型发射极。 因此，在钛基合金膜上设置n + -p-p +层叠体。 SiCNO：使用Ar等离子体钝化n + -p-p +层压体，从而在n +型发射体上形成SiCN / SiO2的防反射膜。 在图案化掩模工艺中蚀刻n + -p-p +层压体。 在钛基合金膜上形成p型欧姆接触。 在图案化掩模工艺中蚀刻抗反射膜。 n +型发射体涂覆有在氢气中退火的钛/钯/银合金膜。 在n +型发射极上形成n型欧姆接触。

    Method for making multi-cystalline film of solar cell
    8.
    发明申请
    Method for making multi-cystalline film of solar cell 审中-公开
    制造太阳能电池多晶硅膜的方法

    公开(公告)号：US20100216278A1

    公开(公告)日：2010-08-26

    申请号：US11976916

    申请日：2007-10-29

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L21/20

    CPC分类号： H01L31/03921 ,  C23C16/24 ,  H01L31/022425 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    摘要： A method is disclosed for making a multi-crystalline silicon film of a solar cell. In the method, a titanium-based film is coated on a ceramic substrate. A back surface field layer is coated on the titanium-based film via providing dichlorosilane and diborane in an atmospheric pressure chemical vapor deposition process at a first temperature. A light-soaking layer is coated on the back surface field layer via providing more dichlorosilane and diborane in the atmospheric pressure chemical vapor deposition process at a second temperature higher than the first temperature.

    摘要翻译： 公开了制造太阳能电池的多晶硅膜的方法。 在该方法中，将钛基膜涂覆在陶瓷基板上。 通过在大气压化学气相沉积工艺中在第一温度下提供二氯硅烷和乙硼烷，将背表面场层涂覆在钛基膜上。 在大气压化学气相沉积工艺中，在高于第一温度的第二温度下，通过提供更多的二氯硅烷和乙硼烷，在背表面场层上涂覆均热层。

    Pulsed high-voltage silicon quantum dot fluorescent lamp
    9.
    发明申请
    Pulsed high-voltage silicon quantum dot fluorescent lamp 有权
    脉冲高压硅量子点荧光灯

    公开(公告)号：US20100216266A1

    公开(公告)日：2010-08-26

    申请号：US11898344

    申请日：2007-09-11

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    IPC分类号： H01L33/44

    CPC分类号： H01J9/223 ,  H01J63/06

    摘要： In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

    摘要翻译： 在制造脉冲高压硅量子点荧光灯的方法中，通过提供第一衬底，用钛的缓冲层涂覆第一衬底来制造激发源，用选择的材料的催化层涂覆缓冲层 由镍，铝和铂组成的一组，并提供多个纳米排放元件，一个催化层。 通过提供第二基板来制造发光源，用氮化钛的透明电极膜涂覆第二基板，并且用包含硅量子点的硅量子点荧光膜涂覆透明电极膜。 在激发源和发射源之间提供脉冲高压源以产生脉冲场效应电场，以使纳米放电元件释放电子并加速电子以激发硅量子点发射脉冲的可见光。