公开(公告)号：US08659853B2

公开(公告)日：2014-02-25

申请号：US13394613

申请日：2010-09-07

Applicant: Guchang Han ,  Jinjun Qiu ,  Li Wang ,  Wee Kay Yeo ,  Chenchen Wang

Inventor： Guchang Han ,  Jinjun Qiu ,  Li Wang ,  Wee Kay Yeo ,  Chenchen Wang

IPC: G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3954 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

Abstract: An ultrahigh differential current perpendicular to the plane dual spin valve read head with high pinning stability. The high pinning stability may be achieved using the same anti-ferromagnetic materials for two spin valves by introducing a double synthetic anti-ferromagnetic structure in one of the two spin valves.

Abstract translation: 超高差分电流垂直于平面双旋转阀读头，具有高钉扎稳定性。 通过在两个自旋阀中的一个中引入双重合成反铁磁结构，可以使用相同的用于两个自旋阀的反铁磁材料来实现高钉扎稳定性。

公开(公告)号：US20120225322A1

公开(公告)日：2012-09-06

申请号：US13394613

申请日：2010-09-07

Applicant: Guchang Han ,  Jinjun Qiu ,  Li Wang ,  Wee Kay Yeo ,  Chenchen Wang

Inventor： Guchang Han ,  Jinjun Qiu ,  Li Wang ,  Wee Kay Yeo ,  Chenchen Wang

IPC: G11B5/33

CPC classification number: G11B5/3954 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

Abstract: In an embodiment, a sensor arrangement may be provided. The sensor arrangement may include a sensor including a first spin valve. The first spin valve may include a first free layer structure; a first pinning structure disposed over the first free layer structure; and a first anti-ferromagnetic layer disposed over the first pinning structure. The sensor may further include a second spin valve. The second spin valve may include a second free layer structure; a second pinning structure disposed over the second free layer structure; and a second anti-ferromagnetic layer disposed over the second pinning structure. The sensor may also include a separator structure positioned between the first spin valve and the second spin valve such that the separator structure may be in contact with the first free layer structure and the second free layer structure. The first pinning structure may include an odd number of first ferromagnetic layers and the second pinning structure may include an even number of second ferromagnetic layers so as to enable the sensor to provide a differential signal when a current flows through the sensor.

Abstract translation: 在一个实施例中，可以提供传感器装置。 传感器装置可包括包括第一自旋阀的传感器。 第一自旋阀可以包括第一自由层结构; 设置在所述第一自由层结构上的第一钉扎结构; 以及设置在所述第一钉扎结构上的第一反铁磁层。 传感器还可以包括第二自旋阀。 第二自旋阀可以包括第二自由层结构; 设置在所述第二自由层结构上的第二钉扎结构; 以及设置在第二钉扎结构上的第二反铁磁层。 传感器还可以包括位于第一自旋阀和第二自旋阀之间的分离器结构，使得分离器结构可以与第一自由层结构和第二自由层结构接触。 第一钉扎结构可以包括奇数个第一铁磁层，并且第二钉扎结构可以包括偶数个第二铁磁层，以便当电流流过传感器时能够使传感器提供差分信号。

公开(公告)号：US20080055792A1

公开(公告)日：2008-03-06

申请号：US11683153

申请日：2007-03-07

Applicant: Yuankai Zheng ,  Jinjun Qiu

Inventor： Yuankai Zheng ,  Jinjun Qiu

IPC: G11B5/33

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11C11/16

Abstract: A magnetoresistive memory cell includes a magnetic tunnel junction (MTJ). The MTJ includes a magnetic layer having a pinned magnetic moment, a tunneling layer, and a free layer. The free layer includes first and second ferromagnetic layers having respective first and second free magnetic moments, which are anti-ferromagnetically coupled to each other and align with a preferred axis of alignment in the absence of an applied magnetic field. The MTJ has an electrical resistance dependent on the direction of one of the free magnetic moments. The memory cell also includes a guide layer formed of a ferromagnetic material providing a guiding magnetic moment, which is configured and positioned so that the guiding magnetic moment is more strongly magnetically coupled to the second free magnetic moment than to the first free magnetic moment, and is aligned with the axis in the absence of the applied magnetic field.

Abstract translation: 磁阻存储单元包括磁隧道结（MTJ）。 MTJ包括具有固定磁矩，隧道层和自由层的磁性层。 自由层包括具有相应的第一和第二自由磁矩的第一和第二铁磁层，它们在不存在所施加的磁场的情况下彼此反铁磁耦合并与优选的对准轴对准。 MTJ具有取决于自由磁矩之一的方向的电阻。 存储单元还包括由提供引导磁矩的铁磁材料形成的引导层，该引导磁矩被构造和定位成使引导磁矩与第一自由磁矩更强烈地磁耦合到第二自由磁矩，以及 在没有所施加的磁场的情况下与轴对齐。