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    Plasma immersion implantation with pulsed anode
    2.
    发明授权
    Plasma immersion implantation with pulsed anode 失效
    用脉冲阳极进行等离子浸入

    公开(公告)号：US5911832A

    公开(公告)日：1999-06-15

    申请号：US780808

    申请日：1997-01-09

    申请人： A. Stuart Denholm ,  Jiqun Shao

    发明人： A. Stuart Denholm ,  Jiqun Shao

    IPC分类号： C23C14/48 ,  H01J37/317 ,  H01J37/32 ,  H01L21/265 ,  C23C16/00

    CPC分类号： H01J37/32412 ,  C23C14/48

    摘要： Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted and includes a conductive inner wall portion in proximity to the chamber interior. A conductive workpiece support extends into an interior region of the implantation chamber. A conductive electrode is disposed within said implantation chamber relative to said conductive workpiece support to allow workpieces to be placed on the workpiece support in a region between the support and the conductive electrode. Gas molecules are injected into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces. The gas molecules are ionized near an implant surface of the workpieces. Control circuitry pulses the conductive electrode to a positive potential relative to the conductive workpiece support, the one or more workpieces, and the conductive wall portion of the implantation chamber. The control circuitry includes a voltage source that provides an electric field through which the ionized gas molecules accelerate before striking the implantation surfaces of the one or more workpieces.

    摘要翻译： 通过使离子冲击工件注入表面来处理工件注入表面的方法和装置。 植入室限定室内部，一个或多个工件可以插入该室内部，并且包括靠近室内部的导电内壁部分。 导电工件支撑件延伸到注入室的内部区域。 导电电极相对于所述导电工件支撑件设置在所述注入室内，以允许工件在支撑件和导电电极之间的区域中放置在工件支撑件上。 气体分子被注入到注入室中，以使得气体分子占据一个或多个工件附近的注入室的区域。 气体分子在工件的植入物表面附近被离子化。 控制电路将导电电极相对于导电工件支撑件，一个或多个工件和注入室的导电壁部分脉冲为正电位。 控制电路包括提供电场的电压源，电离气体分子在撞击一个或多个工件的注入表面之前加速。

    Pulsed plate plasma implantation system and method
    3.
    发明授权
    Pulsed plate plasma implantation system and method 失效
    脉冲平板等离子体植入系统及方法

    公开(公告)号：US5654043A

    公开(公告)日：1997-08-05

    申请号：US728000

    申请日：1996-10-10

    申请人： Jiqun Shao ,  A. Stuart Denholm

    发明人： Jiqun Shao ,  A. Stuart Denholm

    IPC分类号： C23C14/48 ,  H01J37/32 ,  C23C14/14

    CPC分类号： H01J37/32412 ,  C23C14/48

    摘要： Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted. A support positions one or more workpieces within an interior region of the implantation chamber so that implantation surfaces of the workpieces are facing the interior region. A dopant material in the form of a gas is injected into the implantation chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces. A plasma of implantation material is created within the interior region of the implantation chamber. First and second conductive electrodes positioned within the implantation chamber include conductive surfaces in proximity to the chamber interior occupied by the one or more workpieces. A voltage source outside the chamber relatively biases the first and second conductive electrodes. A control circuit utilizes the voltage source for repeatedly relatively biasing the first and second conductive electrodes to energize the electrodes with a sequence of pulses that both ionize the gas molecules injected into the chamber and accelerate the ionized gas molecules toward the implantation surfaces of the one or more workpieces.

    摘要翻译： 通过使离子冲击工件注入表面来处理工件注入表面的方法和装置。 植入室限定一个室内部，一个或多个工件可插入该腔室内部。 支撑件将一个或多个工件定位在植入室的内部区域内，使得工件的注入表面面向内部区域。 将气体形式的掺杂剂材料注入到注入室中，使得气体占据一个或多个工件附近的注入室的区域。 植入材料的等离子体在植入室的内部区域内产生。 位于植入室内的第一和第二导电电极包括靠近由一个或多个工件占据的室内部的导电表面。 室外的电压源相对地偏压第一和第二导电电极。 控制电路利用电压源来重复地相对地偏置第一和第二导电电极，以一序列的脉冲激励电极，这两个脉冲电离电离注入室中的气体分子，并将离子化气体分子加速到一个或多个注入表面 更多的工件。