公开(公告)号：US5961732A

公开(公告)日：1999-10-05

申请号：US872958

申请日：1997-06-11

申请人： John C. Patrin ,  John M. Heitzinger

发明人： John C. Patrin ,  John M. Heitzinger

IPC分类号： B08B5/02 ,  B08B3/08 ,  F25D3/10 ,  H01L21/304 ,  H01L21/306 ,  B08B3/02

CPC分类号： H01L21/02043 ,  F25D2400/22 ,  F25D3/10 ,  Y10S134/902

摘要： A substrate may be treated by impinging the substrate with a cryogenic aerosol spray wherein the cryogenic aerosol spray is formed by expanding a pressurized liquid or liquid/gaseous stream of one or more cryogens through a nozzle at a given distance from the substrate into a process chamber with a pressure of about 1.6.times.10.sup.4 Pascal or less so as to form at least substantially solid aerosol particles of said one or more cryogens downstream from the nozzle by the cooling resulting from the expansion and/or evaporation to form an at least substantially solid particle containing aerosol.

摘要翻译： 底物可以通过用低温气溶胶喷雾冲击基材来处理，其中低温气溶胶喷雾是通过将一个或多个低温原液的加压液体或液体/气体流通过喷嘴以一定距离从基底扩展到处理室而形成的 其压力为约1.6×10 4帕斯卡或更小，以便通过由膨胀和/或蒸发产生的冷却形成至少基本上固体的颗粒，从喷嘴下游形成所述一种或多种低温液的至少基本上固体的气溶胶颗粒， 气雾剂。

公开(公告)号：US06578369B2

公开(公告)日：2003-06-17

申请号：US09820281

申请日：2001-03-28

申请人： Pam Kunkel ,  Natraj Narayanswani ,  John C. Patrin

发明人： Pam Kunkel ,  Natraj Narayanswani ,  John C. Patrin

IPC分类号： F25D1702

CPC分类号： H01L21/67028 ,  B05B1/20 ,  B08B7/0092 ,  B24C1/003 ,  B24C5/04

摘要： Improved nozzle design that discharges more powerful, more focused fluid streams through a series of nozzle orifices distributed along a length of the nozzle. The present invention may be incorporated into a wide range of microelectronic device manufacturing processes and equipment types for which an array of more forceful, more focused process streams are desired for treating microelectronic workpieces. The present invention is particularly useful to cryogenically clean microelectronic workpieces, where the improvements allow the conventionally more troublesome smaller contaminant particles to be cleaningly removed with greater particle removal efficiency.

公开(公告)号：US06251195B1

公开(公告)日：2001-06-26

申请号：US09351939

申请日：1999-07-12

申请人： Thomas J. Wagener ,  John C. Patrin ,  William P. Inhofer ,  Kevin L. Siefering

发明人： Thomas J. Wagener ,  John C. Patrin ,  William P. Inhofer ,  Kevin L. Siefering

IPC分类号： B08B100

CPC分类号： H01L21/67748 ,  H01L21/67028

摘要： An apparatus having a processing chamber for processing a semiconductor wafer under evacuated conditions that is capable of transfer of the wafer from the processing chamber under conditions that are substantially equal to the pressure of an adjacent environment. In a preferred embodiment, the processing chamber is pressurized and vented with a source of high purity dry gas that is diffused into the chamber through a diffuser to pressurize the processing chamber after processing of the wafer is completed. A chamber equalization port between the processing chamber and the adjacent environment is opened to maintain the pressure within the chamber at or slightly above the pressure of the adjacent environment, and the chamber valve is then opened. The wafer can then be removed from the processing chamber, and a new wafer can be inserted. The chamber is then sealed by closing the chamber valve and the equalization port, and the atmosphere within the processing chamber is evacuated to a desired level. The new wafer is then processed, and the above steps are repeated to remove the wafer once processing has finished.

摘要翻译： 一种装置，具有用于在真空条件下处理半导体晶片的处理室，该条件能够在基本上等于相邻环境的压力的条件下从处理室传送晶片。 在优选实施例中，处理室被加压并且用高纯度干燥气体源排出，该干燥气体源通过扩散器扩散到室中，以在晶片的处理完成之后加压处理室。 打开处理室和相邻环境之间的室平衡端口，以将室内的压力维持在或略高于相邻环境的压力，然后打开室阀。 然后可以从处理室移除晶片，并且可以插入新的晶片。 然后通过关闭室阀和均衡端口来密封室，并且处理室内的气氛被抽空到期望的水平。 然后处理新的晶片，一旦处理完成，就重复上述步骤以移除晶片。