公开(公告)号：US5102231A

公开(公告)日：1992-04-07

申请号：US647085

申请日：1991-01-29

申请人： Lee M. Loewenstein ,  John D. Lawrence ,  Wayne G. Fisher ,  Cecil J. Davis

发明人： Lee M. Loewenstein ,  John D. Lawrence ,  Wayne G. Fisher ,  Cecil J. Davis

IPC分类号： G01K5/52

CPC分类号： G01K5/52

摘要： A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.

摘要翻译： 用于测量半导体晶片12的温度的系统包括光源14，可操作以确定光强度的光电检测器20和来自分束器16的预定固定位置的反射镜18.部件被定位成使得光 从光源14入射分束器16，随后从反射镜18和晶片12反射并被光电检测器20接收。晶片12的温度变化基于接收光强度的变化来计算， 取决于晶片的膨胀/收缩。 可以基于已知的参考温度和晶片12温度的变化来计算绝对温度。 还公开了一种用于测量包括使用多个反射镜和两个分束器的半导体晶片的温度的第二系统和方法。