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1.发明授权
公开(公告)号：US6126790A
公开(公告)日：2000-10-03
申请号：US499144
申请日：2000-02-07
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译： 电磁体组件磁性地定向沉积在基底表面上的薄磁膜。 磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。 电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。 控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。
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公开(公告)号：US6042707A
公开(公告)日：2000-03-28
申请号：US83363
申请日：1998-05-22
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00 , C14C14/35
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译： 电磁体组件磁性地定向沉积在基底表面上的薄磁膜。 磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。 电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。 控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。
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3.发明授权Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5591493A
公开(公告)日：1997-01-07
申请号：US472606
申请日：1995-06-07
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译： 具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。
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4.发明授权Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5580385A
公开(公告)日：1996-12-03
申请号：US269414
申请日：1994-06-30
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译： 具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。
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5.发明授权Semiconductor wafer heater with infrared lamp module with light blocking means 失效带红外灯模块的半导体晶片加热器具有遮光装置
公开(公告)号：US5345534A
公开(公告)日：1994-09-06
申请号：US39720
申请日：1993-03-29
IPC分类号： H01L21/26 , H01L21/00 , H01L21/324 , H01L21/20
CPC分类号： H01L21/67115
摘要： A thin reflective cylindrical baffle [20] in a radiant lamp heater is provided in the space below a plurality of heating bulbs [2,4,6] (arranged in a center position and around a middle and outer ring) and above a quartz window [12]. The baffle diameter is such that it fits within the annular space between the middle [4] and outer [6]ring of bulbs. The baffle which blocks a predetermined amount of light generated by the lamp bulbs [20] allows improved controllability of wafer temperature profile--for a wafer heated by a radiant lamp heater.
摘要翻译： 辐射灯加热器中的薄反射圆柱形挡板[20]设置在多个加热灯泡[2,4,6]下方的空间（布置在中心位置并且围绕中间和外环）以及石英窗 [12]。 挡板直径使其适合在中间[4]和外部[6]球形环之间的环形空间内。 阻挡由灯泡[20]产生的预定量的光的挡板允许改善由辐射灯加热器加热的晶片的晶片温度分布的可控制性。
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公开(公告)号：US5102231A
公开(公告)日：1992-04-07
申请号：US647085
申请日：1991-01-29
IPC分类号： G01K5/52
CPC分类号： G01K5/52
摘要： A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.
摘要翻译： 用于测量半导体晶片12的温度的系统包括光源14，可操作以确定光强度的光电检测器20和来自分束器16的预定固定位置的反射镜18.部件被定位成使得光 从光源14入射分束器16，随后从反射镜18和晶片12反射并被光电检测器20接收。晶片12的温度变化基于接收光强度的变化来计算， 取决于晶片的膨胀/收缩。 可以基于已知的参考温度和晶片12温度的变化来计算绝对温度。 还公开了一种用于测量包括使用多个反射镜和两个分束器的半导体晶片的温度的第二系统和方法。
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公开(公告)号：US4923562A
公开(公告)日：1990-05-08
申请号：US279320
申请日：1988-12-01
申请人： Rhett B. Jucha , Cecil J. Davis
发明人： Rhett B. Jucha , Cecil J. Davis
IPC分类号： H01L21/3213
CPC分类号： H01L21/32136
摘要： A processing apparatus and method for anisotropically etching thin film metal (e.g. tungsten) under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a bromine source (such as HBr), plus a very weak oxygen source (e.g. carbon monoxide). This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
摘要翻译： 一种用于在等离子体轰击条件下通过使用包括氟源（例如SF 6）加溴源（例如HBr）的进料气体混合物加上非常弱的氧气的各向异性蚀刻薄膜金属（例如钨）的加工装置和方法 来源（如一氧化碳）。 该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。
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公开(公告)号：US4911103A
公开(公告)日：1990-03-27
申请号：US274611
申请日：1988-11-22
CPC分类号： H01L21/67017 , C23C16/54 , C30B31/103 , C30B35/005
摘要： A process module which is compatible with a system using primarily vacuum wafer transport, but which permits processing multiple slices in parallel in a single module. This is accomplished by using notched quartz arms in the module, so that the transfer arm can place each of several wafers into one set of notches in the quartz arms. Optionally, a vertical degree of movement in the arm may be used to accomplish this, and the quartz arms may be immovable. This means that the port from the multi-wafer module into the wafer transfer system must be high enough to accommodate the necessary vertical movement of the transfer arm. After the transfer arm has placed the wafer on the quartz arms, the process module can be elevated to close around the set of wafers and made a seal. If the wafer transport arm is already configured to access wafers directly out of a multi-wafer vacuum wafer carrier, the necessary degree of freedom will necessarily already be present in the transfer arm, and at least one port of the necessary vertical dimensions will necessarily also be already present (between the loadlock and the transfer chamber). This is particularly useful in combination with relatively slow processes, such as thick field oxidation, long anneals, or long furnace heating steps used to drive in diffusions.
摘要翻译： 一种与使用主要是真空晶片传输的系统兼容的处理模块，但是允许在单个模块中并行处理多个片段。 这通过在模块中使用缺口石英臂来实现，使得传输臂可以将几个晶片中的每一个放置在石英臂中的一组凹口中。 可选地，可以使用臂中的垂直移动度来实现这一点，并且石英臂可以是不可移动的。 这意味着从多晶片模块到晶片传送系统的端口必须足够高以适应传送臂的必要的垂直移动。 在传送臂已经将晶片放置在石英臂上之后，可以将处理模块升高以围绕该组晶片闭合并且形成密封。 如果晶片传送臂已经被配置成直接从多晶片真空晶片载体中进入晶片，则必需的自由度必然已经存在于传送臂中，并且必要的垂直尺寸的至少一个端口也将必然地 已经存在（在负载锁和转移室之间）。 这特别适用于相对较慢的工艺，例如厚场氧化，长退火或用于扩散驱动的长炉加热步骤。
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公开(公告)号：US4882008A
公开(公告)日：1989-11-21
申请号：US216884
申请日：1988-07-08
IPC分类号： G03F7/26 , H01L21/311
CPC分类号： H01L21/31138 , G03F7/265
摘要： A process for developing a photolithographic pattern on the surface of an exposed workpiece in a process chamber; disposing the workpiece in a process chamber; heating the workpiece and introducing a silylating agent to the process chamber and to a face of the workpiece to be processed; generating activated species from a source of oxygen; and introducing the activated species to the face of the workpiece.
摘要翻译： 一种用于在处理室中暴露的工件的表面上显影光刻图案的工艺; 将工件放置在处理室中; 加热工件并将甲硅烷基化剂引入处理室和待加工的工件的表面; 从氧源产生活化物质; 并将活化物质引入到工件的表面。
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公开(公告)号：US4875989A
公开(公告)日：1989-10-24
申请号：US283036
申请日：1988-12-05
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
CPC分类号： H01L21/67017 , G03F7/168
摘要： A processing apparatus and method for edge-preferential processing of partially fabricated integrated circuit wafers or of other substantially flat and thin workpieces. A plasma remote from the workpiece is used to generate activated species, and a baffle which is in proximity to the wafer face but not in contact with it is used to direct the stream of activated species. This module can be set up to perform both edge bead removal and bake of spun-on photoresist.
摘要翻译： 一种用于部分制造的集成电路晶片或其它基本上平坦和薄的工件的边缘优先处理的处理装置和方法。 使用远离工件的等离子体产生活化物质，并且靠近晶片表面而不与其接触的挡板用于引导活化物质流。 该模块可以设置为执行旋转光刻胶的边缘珠去除和烘烤。
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