Method for producing devices having piezoelectric films
    1.
    发明授权
    Method for producing devices having piezoelectric films 有权
    制造具有压电膜的器件的方法

    公开(公告)号:US06475931B2

    公开(公告)日:2002-11-05

    申请号:US09861839

    申请日:2001-05-21

    IPC分类号: H01L2100

    摘要: A method for achieving improved piezoelectric films for use in a resonator device is disclosed. The method is based on applicant's recognition that the texture of a piezoelectric film (e.g., as used in a piezoelectric resonator) is directly affected by the surface morphology of the underlying electrode, and additionally, the surface morphology of the electrode is affected by the surface morphology of the underlying oxide layer or Bragg stack. Accordingly, the invention includes a method of making a device having a piezoelectric film and electrode including controlling the deposition and surface roughness of the electrode and optionally, the Bragg stack.

    摘要翻译: 公开了一种用于实现用于谐振器装置的改进的压电膜的方法。 该方法基于申请人的认识,压电薄膜的结构(例如,如在压电谐振器中使用的)直接受下层电极的表面形态的影响,此外,电极的表面形态受表面的影响 底层氧化层或布拉格堆的形态。 因此,本发明包括制造具有压电膜和电极的器件的方法,该方法包括控制电极的沉积和表面粗糙度以及任选地布拉格堆叠。

    Method for producing devices having piezoelectric films

    公开(公告)号:US06329305B1

    公开(公告)日:2001-12-11

    申请号:US09502868

    申请日:2000-02-11

    IPC分类号: H01L2100

    摘要: A method for achieving improved piezoelectric films for use in a resonator device is disclosed. The method is based on applicant's recognition that the texture of a piezoelectric film (e.g., as used in a piezoelectric resonator) is directly affected by the surface morphology of the underlying electrode, and additionally, the surface morphology of the electrode is affected by the surface morphology of the underlying oxide layer or Bragg stack. Accordingly, the invention comprises a method of making a device having a piezoelectric film and electrode comprising controlling the deposition and surface roughness of the electrode and optionally, the Bragg stack.