公开(公告)号：US06667244B1

公开(公告)日：2003-12-23

申请号：US09534657

申请日：2000-03-24

Applicant: Gerald M. Cox ,  John Kevin Donoghue ,  Kristel Van Baekel ,  Chan-Yun Lee

Inventor： Gerald M. Cox ,  John Kevin Donoghue ,  Kristel Van Baekel ,  Chan-Yun Lee

IPC: H01L21311

CPC classification number: H01L21/02063 ,  C01B5/00 ,  G03F7/40 ,  G03F7/427 ,  H01L21/31138

Abstract: A method for removing organic and inorganic residues or polymers from the surface of semiconductor devices, with a combination of etchant gasses including water vapor generated using a catalytic moisture generator or CMG. The water vapor is generated by introducing O2 and an H2 containing forming gas including hydrogen and at least one dilutant gas into the CMG. The water vapor from the CMG is introduced into a reaction chamber with other etchant gasses to treat the surface of a semiconductor device placed within. The flow rate of water vapor out of the CMG and into the reaction chamber may be controlled by controlling the flow rate of the H2 containing forming gas and the flow rate of the O2 gas into the CMG.

Abstract translation: 一种从半导体器件表面去除有机和无机残留物或聚合物的方法，其中包括使用催化水分发生器或CMG产生的包括水蒸气的蚀刻气体的组合。 通过将O 2和含H 2的形成气体（包括氢气和至少一种稀释气体）引入到CMG中来产生水蒸气。 将来自CMG的水蒸汽引入到具有其它蚀刻气体的反应室中以处理放置在其中的半导体器件的表面。 可以通过控制含H 2成形气体的流量和将O2气体流入CMG来控制从CMG流出并进入反应室的水蒸气流量。