公开(公告)号：US4135289A

公开(公告)日：1979-01-23

申请号：US827105

申请日：1977-08-23

申请人： John R. Brews ,  Dawon Kahng

发明人： John R. Brews ,  Dawon Kahng

IPC分类号： H01L27/108 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L21/26

CPC分类号： H01L29/7838 ,  H01L29/0847 ,  H01L29/1033 ,  H01L27/108

摘要： A method for making a metal oxide semiconductor field effect transistor (MOSFET) is disclosed that results in a semiconductor device structure in which the source and drain regions are buried in the structure beneath a typically thick oxide and bulge out in the semiconductor underneath, but not contiguous with, the interface of a typically thin gate oxide with the semiconductor. This bulging of the buried drain, in an N-channel device, results in an electric field profile during operation which curves away from the interface in the neighborhood of the drain, thereby reducing deleterious transport of electrons from the channel to the gate oxide. The method can also be adapted for fabricating integrated memory cell arrays. This adaptation involves the implantation of one or more layers of dopant ions in the region of the semiconductor between the oxide interface and the bulging portion of the buried drain. The purpose of these layers is to control access of charge carriers to the surface and to control the charge storage properties of the surface region.

摘要翻译： 公开了一种用于制造金属氧化物半导体场效应晶体管（MOSFET）的方法，其导致半导体器件结构，其中源极和漏极区域被掩埋在通常厚的氧化物下面的结构中，并且在下面的半导体中突出，但不是 与通常具有半导体的薄栅极氧化物的界面相邻。 埋入漏极在N沟道器件中的这种凸起在操作期间导致电场分布曲线，其远离漏极附近的界面，从而减少电子从通道到栅极氧化物的有害传输。 该方法还可以适用于制造集成的存储单元阵列。 这种适应涉及在氧化物界面和掩埋漏极的凸出部分之间的半导体区域中注入一层或多层掺杂剂离子。 这些层的目的是控制电荷载体到表面的接近并控制表面区域的电荷存储性质。