Multibit memory cell
    1.
    发明授权
    Multibit memory cell 有权
    多位存储单元

    公开(公告)号:US07352633B2

    公开(公告)日:2008-04-01

    申请号:US11241587

    申请日:2005-09-30

    申请人: John R. Cherukuri

    发明人: John R. Cherukuri

    IPC分类号: G11C7/10

    摘要: Provided are a method, system and device for storing multiple bits into a multibit memory cell. In the illustrated embodiment, each multibit memory cell is a “quadbit” cell capable of storing 4 bits which are read out on four bit lines of the cell in response to activation of a common word line. In the illustrated embodiment, the bit subcells of each cell are arranged in a 2 by 2 array in which two pairs of subcells are each aligned in a longitudinal direction . Conversely, each of two pairs of subcells are also aligned in a transverse direction. Additional embodiments are described and claimed.

    摘要翻译: 提供了一种用于将多位存储到多位存储单元中的方法,系统和设备。 在所示实施例中,每个多位存储器单元是能够存储4位的“四位”单元,其响应于公共字线的激活而在单元的四个位线上读出。 在所示实施例中,每个单元的位子单元被布置成2×2阵列,其中两对子单元在纵向方向上各自排列。 相反,两对子单元中的每一对也在横向方向上排列。 描述和要求保护附加的实施例。