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公开(公告)号:US09356170B2
公开(公告)日:2016-05-31
申请号:US14215804
申请日:2014-03-17
IPC分类号: H01L31/0352 , H01L31/108 , G01N21/552
CPC分类号: H01L31/035281 , G01N21/554 , H01L31/03046 , H01L31/035209 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要: Terahertz (THz) distributed detectors, and arrays of detectors that utilize structured surface plasmonic effects for more efficient coupling to free space are discussed. One example distributed detector includes a detector junction comprising a Schottky or tunneling interface between a semiconductor and a detector metal, an ohmic junction comprising an ohmic interface between the semiconductor and an ohmic metal, and a gap that separates the detector junction from the ohmic junction. Structured surface plasmons concentrate an electric field in the gap when the distributed detector is exposed to THz radiation polarized perpendicular to the gap.
摘要翻译: 讨论了太赫兹(THz)分布式检测器和利用结构化表面等离子体效应的检测器阵列,以更有效地耦合到自由空间。 一个示例性分布式检测器包括检测器结,其包括在半导体和检测器金属之间的肖特基或隧道界面,包括半导体和欧姆金属之间的欧姆接口的欧姆接头以及将检测器接头与欧姆接头分开的间隙。 当分布式检测器暴露于垂直于间隙偏振的THz辐射时,结构化表面等离子体质子将间隙中的电场集中。
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公开(公告)号:US20150280036A1
公开(公告)日:2015-10-01
申请号:US14215804
申请日:2014-03-17
IPC分类号: H01L31/0352 , H01L27/146 , H01L31/108
CPC分类号: H01L31/035281 , G01N21/554 , H01L31/03046 , H01L31/035209 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要: Terahertz (THz) distributed detectors, and arrays of detectors that utilize structured surface plasmonic effects for more efficient coupling to free space are discussed. One example distributed detector includes a detector junction comprising a Schottky or tunneling interface between a semiconductor and a detector metal, an ohmic junction comprising an ohmic interface between the semiconductor and an ohmic metal, and a gap that separates the detector junction from the ohmic junction. Structured surface plasmons concentrate an electric field in the gap when the distributed detector is exposed to THz radiation polarized perpendicular to the gap.
摘要翻译: 讨论了太赫兹(THz)分布式检测器和利用结构化表面等离子体效应的检测器阵列,以更有效地耦合到自由空间。 一个示例性分布式检测器包括检测器结,其包括在半导体和检测器金属之间的肖特基或隧道界面,包括半导体和欧姆金属之间的欧姆接口的欧姆接头以及将检测器接头与欧姆接头分开的间隙。 当分布式检测器暴露于垂直于间隙偏振的THz辐射时,结构化表面等离子体质子将间隙中的电场集中。
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