Substrate supports for semiconductor applications
    2.
    发明授权
    Substrate supports for semiconductor applications 有权
    基板支持半导体应用

    公开(公告)号:US08619406B2

    公开(公告)日:2013-12-31

    申请号:US13117262

    申请日:2011-05-27

    IPC分类号: H01T23/00

    CPC分类号: H01L21/6833 H01L21/6831

    摘要: This invention relates to substrate supports, e.g., coated electrostatic chucks, having a dielectric multilayer formed thereon; dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as plasma treating vessels used in semiconductor device manufacture; process chambers, e.g., deposition chambers, for processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on a surface; and (b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer. The topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent. The topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a porosity greater than the porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in semiconductor device manufacture.

    摘要翻译: 本发明涉及其上形成有电介质多层的衬底支撑体,例如涂覆的静电吸盘; 在诸如半导体器件制造中使用的等离子体处理容器等恶劣环境中提供腐蚀性和腐蚀性屏障保护的电介质多层膜; 处理室,例如沉积室,用于处理衬底; 用于保护衬底支撑件的方法; 以及用于制造衬底支撑件和电子器件的方法。 电介质层包括(a)在表面上形成的包含金属氧化物或金属氮化物的底涂层介电层; 和(b)包含在底涂层介电层上形成的金属氧化物的面漆介电层。 面漆介电层的氧化铝含量小于约1重量%。 面漆介电层具有比底涂层电介质层的耐腐蚀性和/或耐等离子体侵蚀性更强的耐腐蚀性和/或等离子体侵蚀性。 底涂层介电层的电阻率可以大于外涂层电介质层的电阻率。 面漆介电层的介电常数可以大于底涂层介电层的介电常数。 底涂层介电层的孔隙率可以大于顶涂层介电层的孔隙率。 本发明在例如半导体器件制造中使用的静电卡盘的制造和保护中是有用的。

    SUBSTRATE SUPPORTS FOR SEMICONDUCTOR APPLICATIONS
    3.
    发明申请
    SUBSTRATE SUPPORTS FOR SEMICONDUCTOR APPLICATIONS 有权
    用于半导体应用的基板支持

    公开(公告)号:US20120141661A1

    公开(公告)日:2012-06-07

    申请号:US13117262

    申请日:2011-05-27

    IPC分类号: H02N13/00 B05D5/00 B05D5/12

    CPC分类号: H01L21/6833 H01L21/6831

    摘要: This invention relates to substrate supports, e.g., coated electrostatic chucks, having a dielectric multilayer formed thereon; dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as plasma treating vessels used in semiconductor device manufacture; process chambers, e.g., deposition chambers, for processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on a surface; and (b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer. The topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent. The topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a porosity greater than the porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in semiconductor device manufacture.

    摘要翻译: 本发明涉及其上形成有电介质多层的衬底支撑体,例如涂覆的静电吸盘; 在诸如半导体器件制造中使用的等离子体处理容器等恶劣环境中提供腐蚀性和腐蚀性屏障保护的电介质多层膜; 处理室,例如沉积室,用于处理衬底; 用于保护衬底支撑件的方法; 以及用于制造衬底支撑件和电子器件的方法。 电介质层包括(a)在表面上形成的包含金属氧化物或金属氮化物的底涂层介电层; 和(b)包含在底涂层介电层上形成的金属氧化物的面漆介电层。 面漆介电层的氧化铝含量小于约1重量%。 面漆介电层具有比底涂层电介质层的耐腐蚀性和/或耐等离子体侵蚀性更强的耐腐蚀性和/或等离子体侵蚀性。 底涂层介电层的电阻率可以大于外涂层电介质层的电阻率。 面漆介电层的介电常数可以大于底涂层介电层的介电常数。 底涂层介电层的孔隙率可以大于顶涂层介电层的孔隙率。 本发明在例如半导体器件制造中使用的静电卡盘的制造和保护中是有用的。

    Fluid heating method
    4.
    发明申请
    Fluid heating method 有权
    流体加热方式

    公开(公告)号:US20070134604A1

    公开(公告)日:2007-06-14

    申请号:US11297328

    申请日:2005-12-09

    IPC分类号: C10L1/12

    摘要: A method of heating a fluid utilizing a process heater having one or more first combustion zones and one or more second combustion zones. The combustion of a fuel is divided between the first and second combustion zones. The oxygen is provided for combustion within the first combustion zone by one or more oxygen transport membranes that contribute between about 50 and 99 percent of the stoichiometric amount of oxygen required for complete combustion of the fuel passing through the process heater. A supplemental or secondary oxidant is introduced into second combustion zone to complete combustion of the fuel and thereby produce a flue gas stream containing between about 1 and 3 percent oxygen to ensure complete combustion of the fuel. In this manner, the surface area of the oxygen transport membranes may be reduced below the surface area that otherwise would be required if 100 percent of the oxygen were contributed by the oxygen transport membranes.

    摘要翻译: 利用具有一个或多个第一燃烧区和一个或多个第二燃烧区的过程加热器加热流体的方法。 燃料的燃烧在第一和第二燃烧区之间分配。 氧气通过一个或多个氧传输膜在第一燃烧区内燃烧,其贡献了通过过程加热器的燃料的完全燃烧所需的化学计量量的约50-99%之间。 将补充或二次氧化剂引入第二燃烧区以完成燃料的燃烧,从而产生含有约1至3%氧气的烟气流,以确保燃料的完全燃烧。 以这种方式,氧传输膜的表面积可以降低到低于表面积,否则如果100%的氧由氧传输膜贡献的话。

    Fluid heating method
    5.
    发明授权
    Fluid heating method 有权
    流体加热方式

    公开(公告)号:US07384452B2

    公开(公告)日:2008-06-10

    申请号:US11297328

    申请日:2005-12-09

    IPC分类号: B01D53/22 C01B13/02 F23L7/00

    摘要: A method of heating a fluid utilizing a process heater having one or more first combustion zones and one or more second combustion zones. The combustion of a fuel is divided between the first and second combustion zones. The oxygen is provided for combustion within the first combustion zone by one or more oxygen transport membranes that contribute between about 50 and 99 percent of the stoichiometric amount of oxygen required for complete combustion of the fuel passing through the process heater. A supplemental or secondary oxidant is introduced into second combustion zone to complete combustion of the fuel and thereby produce a flue gas stream containing between about 1 and 3 percent oxygen to ensure complete combustion of the fuel. In this manner, the surface area of the oxygen transport membranes may be reduced below the surface area that otherwise would be required if 100 percent of the oxygen were contributed by the oxygen transport membranes.

    摘要翻译: 利用具有一个或多个第一燃烧区和一个或多个第二燃烧区的过程加热器加热流体的方法。 燃料的燃烧在第一和第二燃烧区之间分配。 氧气通过一个或多个氧传输膜在第一燃烧区内燃烧,其贡献了通过过程加热器的燃料的完全燃烧所需的化学计量量的约50-99%之间。 将补充或二次氧化剂引入第二燃烧区以完成燃料的燃烧,从而产生含有约1至3%氧气的烟气流,以确保燃料的完全燃烧。 以这种方式,氧传输膜的表面积可以降低到低于表面积,否则如果100%的氧由氧传输膜贡献的话。