公开(公告)号：US6015732A

公开(公告)日：2000-01-18

申请号：US709479

申请日：1996-09-06

申请人： Jon Roderick Williamson ,  Subhash R. Nariani

发明人： Jon Roderick Williamson ,  Subhash R. Nariani

IPC分类号： H01L21/8234 ,  H01L21/8247 ,  H01L27/088 ,  H01L21/8242

CPC分类号： H01L27/11526 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/11539

摘要： Within a dual gate oxide process, gate oxide is formed within regions on a substrate. Gate material, such as polysilicon, is placed over a first region. The gate material extends over field oxide surrounding the first region. Gate oxide within a second region is stripped. The gate material over the first region prevents gate oxide within the first region from being stripped. A new layer of gate oxide is formed within the second region. A first transistor gate is formed within the second region. The gate material which is over the first region is etched to form a second transistor gate.

摘要翻译： 在双栅极氧化物工艺中，栅极氧化物形成在衬底上的区域内。 诸如多晶硅的栅极材料放置在第一区域上。 栅极材料在围绕第一区域的场氧化物上延伸。 剥离第二区域内的栅极氧化物。 第一区域上的栅极材料防止第一区域内的栅极氧化物被剥离。 在第二区域内形成新的栅极氧化层。 第一晶体管栅极形成在第二区域内。 在第一区域之上的栅极材料被蚀刻以形成第二晶体管栅极。