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公开(公告)号：US20110074007A1
公开(公告)日：2011-03-31
申请号：US12569314
申请日：2009-09-29
IPC分类号： H01L23/495 , H01L21/50
CPC分类号： H01L23/49568 , H01L23/3107 , H01L23/49537 , H01L23/49562 , H01L24/34 , H01L2224/32245 , H01L2224/8385 , H01L2224/8485 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： A method and structure for a dual heat dissipating semiconductor device. A method includes attaching a drain region on a first side of a die, such as a power metal oxide semiconductor field effect transistor (MOSFET) to a first leadframe subassembly. A source region and a gate region on a second side of the die are attached to a second leadframe subassembly. The first leadframe subassembly is attached to a third leadframe subassembly, then the device is encapsulated or otherwise packaged. An exposed portion of the first leadframe subassembly provides an external heat sink for the drain region, and the second leadframe subassembly provides external heat sinks for the source region and the gate region, as well as output leads for the gate region. The third leadframe subassembly provides output leads for the drain region.
摘要翻译： 一种双重散热半导体器件的方法和结构。 一种方法包括将诸如功率金属氧化物半导体场效应晶体管（MOSFET）的管芯的第一侧上的漏极区域附接到第一引线框子组件。 模具的第二侧上的源极区域和栅极区域附接到第二引线框架子组件。 第一引线框子组件连接到第三引线框子组件，然后将器件封装或以其它方式封装。 第一引线框子组件的暴露部分提供用于漏区的外部散热器，并且第二引线框子组件为源极区域和栅极区域以及栅极区域的输出引线提供外部散热器。 第三引线框子组件提供漏区的输出引线。
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公开(公告)号：US08354303B2
公开(公告)日：2013-01-15
申请号：US12569314
申请日：2009-09-29
IPC分类号： H01L21/00
CPC分类号： H01L23/49568 , H01L23/3107 , H01L23/49537 , H01L23/49562 , H01L24/34 , H01L2224/32245 , H01L2224/8385 , H01L2224/8485 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： A method and structure for a dual heat dissipating semiconductor device. A method includes attaching a drain region on a first side of a die, such as a power metal oxide semiconductor field effect transistor (MOSFET) to a first leadframe subassembly. A source region and a gate region on a second side of the die are attached to a second leadframe subassembly. The first leadframe subassembly is attached to a third leadframe subassembly, then the device is encapsulated or otherwise packaged. An exposed portion of the first leadframe subassembly provides an external heat sink for the drain region, and the second leadframe subassembly provides external heat sinks for the source region and the gate region, as well as output leads for the gate region. The third leadframe subassembly provides output leads for the drain region.
摘要翻译： 一种双重散热半导体器件的方法和结构。 一种方法包括将诸如功率金属氧化物半导体场效应晶体管（MOSFET）的管芯的第一侧上的漏极区域附接到第一引线框子组件。 模具的第二侧上的源极区域和栅极区域附接到第二引线框架子组件。 第一引线框子组件连接到第三引线框子组件，然后将器件封装或以其它方式封装。 第一引线框子组件的暴露部分提供用于漏区的外部散热器，并且第二引线框子组件为源极区域和栅极区域以及栅极区域的输出引线提供外部散热器。 第三引线框子组件提供漏区的输出引线。
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