Speaker verification and identification using artificial neural network-based sub-phonetic unit discrimination
    1.
    发明授权
    Speaker verification and identification using artificial neural network-based sub-phonetic unit discrimination 有权
    使用基于人工神经网络的子语音单元歧视的演讲者验证和识别

    公开(公告)号:US09230550B2

    公开(公告)日:2016-01-05

    申请号:US13738868

    申请日:2013-01-10

    CPC classification number: G10L17/14 G06N3/082 G06N3/084 G10L17/04 G10L17/18

    Abstract: In one embodiment, a computer system stores speech data for a plurality of speakers, where the speech data includes a plurality of feature vectors and, for each feature vector, an associated sub-phonetic class. The computer system then builds, based on the speech data, an artificial neural network (ANN) for modeling speech of a target speaker in the plurality of speakers, where the ANN is configured to discriminate between instances of sub-phonetic classes uttered by the target speaker and instances of sub-phonetic classes uttered by other speakers in the plurality of speakers.

    Abstract translation: 在一个实施例中,计算机系统存储用于多个扬声器的语音数据,其中语音数据包括多个特征向量,并且对于每个特征向量,存储相关联的子语音类。 计算机系统然后基于语音数据建立用于对多个扬声器中的目标扬声器的语音进行建模的人造神经网络(ANN),其中ANN被配置为区分由目标发出的子语音类别的实例 扬声器和多个扬声器中的其他扬声器发出的子语音类的实例。

    High performance diode-implanted voltage-controlled poly resistors for mixed-signal and RF applications
    2.
    发明申请
    High performance diode-implanted voltage-controlled poly resistors for mixed-signal and RF applications 有权
    用于混合信号和RF应用的高性能二极管注入的电压控制多电阻

    公开(公告)号:US20060097349A1

    公开(公告)日:2006-05-11

    申请号:US10984286

    申请日:2004-11-09

    CPC classification number: H01L28/20 H01L29/66136 H01L29/8611

    Abstract: A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.

    Abstract translation: 形成在层间电介质层中的p型多晶硅电阻器包含注入二极管。 施加到二极管的正电压调制二极管的耗尽区并改变p型多晶硅电阻器的绝对电阻。 这种调制不仅水平发生,而且垂直发生。 可调电阻器是p型多晶硅电阻器的事实意味着这种结构可以容易地集成到该工艺中,因为多晶硅用作用于基本CMOS处理的栅极材料。

    Truly handsfree speech recognition in high noise environments
    5.
    发明授权
    Truly handsfree speech recognition in high noise environments 有权
    在高噪声环境下实现免提语音识别

    公开(公告)号:US08645132B2

    公开(公告)日:2014-02-04

    申请号:US13217146

    申请日:2011-08-24

    CPC classification number: G10L15/22 G10L15/063 G10L15/20

    Abstract: Embodiments of the present invention improve content manipulation systems and methods using speech recognition. In one embodiment, the present invention includes a method comprising configuring a recognizer to recognize utterances in the presence of a background audio signal having particular audio characteristics. A composite signal comprising a first audio signal and a spoken utterance of a user is received by the recognizer, where the first audio signal comprises the particular audio characteristics used to configure the recognizer so that the recognizer is desensitized to the first audio signal. The spoke utterance is recognized in the presence of the first audio signal when the spoken utterance is one of the predetermined utterances. An operation is performed on the first audio signal.

    Abstract translation: 本发明的实施例改进了使用语音识别的内容操纵系统和方法。 在一个实施例中,本发明包括一种方法,包括配置识别器以在存在具有特定音频特征的背景音频信号的情况下识别语音。 由识别器接收包括用户的第一音频信号和口语发音的复合信号,其中第一音频信号包括用于配置识别器的特定音频特性,使得识别器对第一音频信号进行脱敏。 当说话话语是预定话语之一时,在存在第一音频信号的情况下识别讲话话语。 对第一音频信号进行操作。

    Elastomeric Gasket
    6.
    发明申请
    Elastomeric Gasket 审中-公开
    弹性垫片

    公开(公告)号:US20110284194A1

    公开(公告)日:2011-11-24

    申请号:US12784068

    申请日:2010-05-20

    CPC classification number: F28F3/10

    Abstract: A plate heat exchanger includes a set of plates and gaskets. Each one of the set gaskets is disposed between two adjacent plates of the set of plates. A gasket of the set of gaskets includes a base material, a fluorocarbon coating disposed on the base material; and an interface layer disposed between the base material and the fluorocarbon coating. The interface layer includes a material gradient transitioning from the base material to the fluorocarbon coating. The fluorocarbon coating is chemically bound to the base material.

    Abstract translation: 板式换热器包括一组板和垫圈。 设置的垫圈中的每一个设置在该组板的两个相邻的板之间。 一组垫片的垫圈包括基材,设置在基材上的氟碳涂层; 以及设置在基材和氟碳涂层之间的界面层。 界面层包括从基底材料转移到氟碳涂层的材料梯度。 氟碳涂层化学键合到基材上。

    HIGH PERFORMANCE DIODE IMPLANTED VOLTAGE CONTROLLED P-TYPE DIFFUSION RESISTOR
    7.
    发明申请
    HIGH PERFORMANCE DIODE IMPLANTED VOLTAGE CONTROLLED P-TYPE DIFFUSION RESISTOR 失效
    高性能二极管嵌入式电压控制P型扩散电阻器

    公开(公告)号:US20050121746A1

    公开(公告)日:2005-06-09

    申请号:US10730554

    申请日:2003-12-08

    CPC classification number: H01L27/0802 H01L29/808 H01L29/8605

    Abstract: The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains first and second contact regions extending downward from the surface of the substrate. Third and fourth contacts are also located within the diffusion region between the first and second contacts and define a conduction channel therebetween. This contact also extends downward from the surface of the substrate. These contacts are connected to metal layers. The first and second contacts form the two ends of the diffusion resistor; the third and fourth contacts connect to N+p− diodes such that application of a voltage to these contacts forms respective depletion regions within the diffusion region. The depletion regions change in size depending on the voltage applied to their respective contact, thereby changing the resistance of the depletion resistor.

    Abstract translation: 本发明提供一种形成在基板中的扩散电阻器。 扩散区形成在衬底内,其包含从衬底的表面向下延伸的第一和第二接触区域。 第三和第四触点也位于第一和第二触点之间的扩散区域内,并且在它们之间限定传导通道。 该接触部也从基板的表面向下延伸。 这些触点连接到金属层。 第一和第二触点形成扩散电阻器的两端; 第三和第四触点连接到N + p二极管,使得向这些触点施加电压在扩散区内形成相应的耗尽区。 耗尽区根据施加到其各自的触点的电压而改变尺寸,从而改变耗尽电阻的电阻。

    High performance voltage control diffusion resistor
    8.
    发明申请
    High performance voltage control diffusion resistor 失效
    高性能电压控制扩散电阻器

    公开(公告)号:US20050062586A1

    公开(公告)日:2005-03-24

    申请号:US10668875

    申请日:2003-09-23

    Abstract: The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains a first and second contact region. These contact regions extend downward from the surface of the substrate. A third contact is located within the diffusion region between the first and second contacts. This contact also extends downward from the surface of the substrate. These contacts are connected to metal layers. The first and second contacts form the two ends of the diffusion resistor. The third contact forms a Schottky diode such that application of a voltage to this contact forms a depletion region within the diffusion region. The depletion region changes in size depending on the voltage applied to the third contact to change the resistance of the depletion resistor.

    Abstract translation: 本发明提供一种形成在基板中的扩散电阻器。 在包含第一和第二接触区域的衬底内形成扩散区域。 这些接触区域从衬底的表面向下延伸。 第三触点位于第一和第二触点之间的扩散区域内。 该接触部也从基板的表面向下延伸。 这些触点连接到金属层。 第一和第二触点形成扩散电阻器的两端。 第三接触形成肖特基二极管,使得向该接触施加电压在扩散区内形成耗尽区。 耗尽区根据施加到第三触点的电压而改变尺寸,以改变耗尽电阻的电阻。

    Reducing false positives in speech recognition systems
    9.
    发明授权
    Reducing false positives in speech recognition systems 有权
    减少语音识别系统中的误报

    公开(公告)号:US08781825B2

    公开(公告)日:2014-07-15

    申请号:US13217134

    申请日:2011-08-24

    CPC classification number: G10L15/10 G10L25/03

    Abstract: Embodiments of the present invention improve methods of performing speech recognition. In one embodiment, the present invention includes a method comprising receiving a spoken utterance, processing the spoken utterance in a speech recognizer to generate a recognition result, determining consistencies of one or more parameters of component sounds of the spoken utterance, wherein the parameters are selected from the group consisting of duration, energy, and pitch, and wherein each component sound of the spoken utterance has a corresponding value of said parameter, and validating the recognition result based on the consistency of at least one of said parameters.

    Abstract translation: 本发明的实施例改进了执行语音识别的方法。 在一个实施例中,本发明包括一种方法,包括接收口语话语,处理语音识别器中的语音话语以产生识别结果,确定所述语音话语的分量声音的一个或多个参数的一致性,其中选择参数 来自由持续时间,能量和音调组成的组,并且其中所述说话话语的每个分量声音具有所述参数的对应值,并且基于所述参数中的至少一个的一致性验证所述识别结果。

    REDUCING FALSE POSITIVES IN SPEECH RECOGNITION SYSTEMS
    10.
    发明申请
    REDUCING FALSE POSITIVES IN SPEECH RECOGNITION SYSTEMS 有权
    减少语音识别系统中的虚假活动

    公开(公告)号:US20130054242A1

    公开(公告)日:2013-02-28

    申请号:US13217134

    申请日:2011-08-24

    CPC classification number: G10L15/10 G10L25/03

    Abstract: Embodiments of the present invention improve methods of performing speech recognition. In one embodiment, the present invention includes a method comprising receiving a spoken utterance, processing the spoken utterance in a speech recognizer to generate a recognition result, determining consistencies of one or more parameters of component sounds of the spoken utterance, wherein the parameters are selected from the group consisting of duration, energy, and pitch, and wherein each component sound of the spoken utterance has a corresponding value of said parameter, and validating the recognition result based on the consistency of at least one of said parameters.

    Abstract translation: 本发明的实施例改进了执行语音识别的方法。 在一个实施例中,本发明包括一种方法,包括接收口语话语,处理语音识别器中的语音话语以产生识别结果,确定所述语音话语的分量声音的一个或多个参数的一致性,其中选择参数 来自由持续时间,能量和音调组成的组,并且其中所述说话话语的每个分量声音具有所述参数的对应值,并且基于所述参数中的至少一个的一致性验证所述识别结果。

Patent Agency Ranking