公开(公告)号：US4602190A

公开(公告)日：1986-07-22

申请号：US612524

申请日：1984-05-21

申请人： Joseph D. Evankow, Jr.

发明人： Joseph D. Evankow, Jr.

IPC分类号： H01J25/76 ,  H01J7/46

CPC分类号： H01J25/76

摘要： The placement of one or a pair of suitably biased thin semiconductor epital layers on the secondary emission surface of a multipactor device provides an improvement of devices which operate in accordance with the principle of multipactoring. A multipactor device is disclosed having a multipactor region comprised of at least one surface formed of one or more thin epitaxial semiconductor layers, the outer layer being of n-type semiconductor material consisting of, for example, gallium phosphide covered with cesium which provides an abundance of free electrons at the surface when biased in the forward direction. In one disclosed configuration the multipactor region is located in a section of waveguide while in another arrangement the region is located on the top of a post in a multipactor input cavity.

摘要翻译： 在多反应器装置的二次发射表面上放置一个或一对适当偏置的薄半导体外延层提供了根据多次反馈原理操作的装置的改进。 公开了具有由至少一个由一个或多个薄外延半导体层形成的表面的多层反应器区域的多层反应器区域，该外层是由例如提供丰度的铯覆盖的磷化镓构成的n型半导体材料 的自由电子在正向方向偏置时的表面。 在一个所公开的配置中，多个反应器区域位于波导的一部分中，而在另一布置中，该区域位于多反应器输入腔中的柱的顶部。

公开(公告)号：US5430572A

公开(公告)日：1995-07-04

申请号：US129825

申请日：1993-09-30

申请人： David J. DiGiovanni ,  Joseph D. Evankow ,  Jonathan A. Nagel ,  Richard G. Smart ,  James W. Sulhoff ,  John L. Zyskind

发明人： David J. DiGiovanni ,  Joseph D. Evankow ,  Jonathan A. Nagel ,  Richard G. Smart ,  James W. Sulhoff ,  John L. Zyskind

IPC分类号： G02B6/00 ,  C03C13/04 ,  H01S3/06 ,  H01S3/067 ,  H01S3/07 ,  H01S3/094 ,  H01S3/10 ,  H01S3/17 ,  G02B6/26

CPC分类号： H01S3/06758 ,  H01S2301/02 ,  H01S3/0078 ,  H01S3/094061 ,  H01S3/09408 ,  H04B2210/003

摘要： High output power, high gain, and low noise are achieved in a two-stage optical amplifier, suitable for use as a repeater for a long haul lightwave communication system, in accordance with the principles of the invention, by employing a first amplifying stage having a signal gain sufficiently small to prevent self-saturation by amplified stimulated emission (ASE) that uses counter-propagating pump light to cause maximum inversion of the first stage amplifying medium. In an illustrative embodiment of the invention, EDFAs are used in each of two amplifying stages. The length of the EDFA in the first stage is short enough to ensure nearly complete inversion of the EDFA from pump light that counter-propagates with the signal. The counter-propagating pump light allows the invention to advantageously avoid the significant noise figure penalty from the input loss associated with co-propagating pump light. And, noise figure is improved because complete inversion is achieved throughout the EDFA, and, at the input where the noise figure is most sensitive to inversion. The short length also eliminates self-saturation of the EDFA from ASE which degrades the noise figure. However, the length, and hence the gain, of the EDFA in the first stage is long enough to provide sufficient gain so that the noise figure of the two-stage amplifier, as a whole, is determined primarily by that of the first stage. A second EDFA in the second stage of the amplifier may then be configured using co-propagating or counter-propagating pump light for additional signal amplification to provide the required output power and gain for long haul lightwave systems. Other aspects of illustrative embodiments of the invention include the use of passive optical elements including filters, isolators, and attenuators.

摘要翻译： 在根据本发明的原理的适合用作长距离光波通信系统的中继器的两级光放大器中实现高输出功率，高增益和低噪声，通过采用第一放大级具有 信号增益足够小以通过使用反向传播的泵浦光来引起第一级放大介质的最大反转的放大的受激发射（ASE）来防止自饱和。 在本发明的说明性实施例中，EDFA用于两个放大级中的每一个。 EDFA在第一阶段的长度足够短，以确保EDFA与泵浦光几乎完全反转，该信号与信号反向传播。 反向传播的泵浦光允许本发明有利地避免与共同传播的泵浦光相关联的输入损耗的显着的噪声指数损失。 并且，噪声系数得到改善，因为在整个EDFA中完成了反演，并且在噪声系数对反演最敏感的输入处。 短的长度还消除了ASE中EDFA的自饱和度，降低了噪声系数。 然而，EDFA在第一级中的长度以及因此的增益足够长以提供足够的增益，使得两级放大器的噪声系数作为整体主要由第一级决定。 然后可以使用共同传播或反向传播的泵浦光来配置放大器的第二级中的第二EDFA，用于附加的信号放大，以为远距离的光波系统提供所需的输出功率和增益。 本发明的说明性实施例的其它方面包括使用包括滤波器，隔离器和衰减器的无源光学元件。