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    Semiconductor device having line-type trench to define active region and method of forming the same
    1.
    发明授权
    Semiconductor device having line-type trench to define active region and method of forming the same 有权
    具有线性沟槽以限定有源区的半导体器件及其形成方法

    公开(公告)号：US08729675B1

    公开(公告)日：2014-05-20

    申请号：US13763927

    申请日：2013-02-11

    申请人： Jay-Bok Choi ,  Kyu-Hyun Lee ,  Mi-Jeong Jang ,  Young-Jin Choi ,  Ju-Young Huh

    发明人： Jay-Bok Choi ,  Kyu-Hyun Lee ,  Mi-Jeong Jang ,  Young-Jin Choi ,  Ju-Young Huh

    IPC分类号： H01L29/40

    CPC分类号： H01L23/49838 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10847 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a plurality of parallel-trenches that are parallel to each other, a plurality of intersect-trenches that are parallel to each other, a plurality of active regions that are confined by the parallel-trenches and the intersect-trenches, a plurality of lower conductive lines that cross the active regions, a plurality of upper conductive lines that are parallel to each other, that cross the lower conductive lines, and that cross over the active regions, and data storage elements connected to the active regions. Each of the parallel-trenches and the intersect-trenches is a straight line. The parallel-trenches cross the upper conductive lines and form a first acute angle with the upper conductive lines. The intersect-trenches cross the parallel-trenches and form a second acute angle with the parallel-trenches.

    摘要翻译： 半导体器件包括彼此平行的多个平行沟槽，彼此平行的多个相交沟槽，由平行沟槽和交叉沟槽约束的多个有源区域，一个 穿过有源区的多个下导电线，彼此平行的多个上导线，穿过下导电线，并跨越有源区，以及连接到有源区的数据存储元件。 每个平行沟槽和交叉沟槽都是直线。 平行沟槽穿过上导电线并与上导线形成第一锐角。 交叉沟槽与平行沟槽交叉并与平行沟槽形成第二锐角。

    SEMICONDUCTOR DEVICE HAVING LINE-TYPE TRENCH TO DEFINE ACTIVE REGION AND METHOD OF FORMING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE HAVING LINE-TYPE TRENCH TO DEFINE ACTIVE REGION AND METHOD OF FORMING THE SAME 有权
    具有线型倾斜的半导体器件定义活性区域及其形成方法

    公开(公告)号：US20140117566A1

    公开(公告)日：2014-05-01

    申请号：US13763927

    申请日：2013-02-11

    申请人： Jay-Bok CHOI ,  Kyu-Hyun LEE ,  Mi-Jeong JANG ,  Young-Jin CHOI ,  Ju-Young HUH

    发明人： Jay-Bok CHOI ,  Kyu-Hyun LEE ,  Mi-Jeong JANG ,  Young-Jin CHOI ,  Ju-Young HUH

    IPC分类号： H01L23/498

    CPC分类号： H01L23/49838 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10847 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a plurality of parallel-trenches that are parallel to each other, a plurality of intersect-trenches that are parallel to each other, a plurality of active regions that are confined by the parallel-trenches and the intersect-trenches, a plurality of lower conductive lines that cross the active regions, a plurality of upper conductive lines that are parallel to each other, that cross the lower conductive lines, and that cross over the active regions, and data storage elements connected to the active regions. Each of the parallel-trenches and the intersect-trenches is a straight line. The parallel-trenches cross the upper conductive lines and form a first acute angle with the upper conductive lines. The intersect-trenches cross the parallel-trenches and form a second acute angle with the parallel-trenches.

    摘要翻译： 半导体器件包括彼此平行的多个平行沟槽，彼此平行的多个相交沟槽，由平行沟槽和交叉沟槽约束的多个有源区域，一个 穿过有源区的多个下导电线，彼此平行的多个上导线，穿过下导电线，并跨越有源区，以及连接到有源区的数据存储元件。 每个平行沟槽和交叉沟槽都是直线。 平行沟槽穿过上导电线并与上导线形成第一锐角。 交叉沟槽与平行沟槽交叉并与平行沟槽形成第二锐角。