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1.发明授权Method for growing transparent conductive GaInO.sub.3 films by pulsed laser deposition 失效通过脉冲激光沉积生长透明导电GaInO3薄膜的方法
公开(公告)号：US5538767A
公开(公告)日：1996-07-23
申请号：US377546
申请日：1995-01-24
CPC分类号： C23C14/28 , C23C14/086 , Y10T428/265
摘要： Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.
摘要翻译： 申请人已经发现通过脉冲激光沉积在衬底上生长的导电掺杂的GaInO 3薄膜具有与常规宽带隙透明导体相当的导电性，同时表现出优异的光透射性，特别是在可见光谱的绿色和蓝色波长区域。 在分压为0.1mTorr至100mTorr的含氧气氛中，底物温度范围为室温至350℃。 优选的激光源是在深紫外线中操作的准分子激光器。
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2.发明授权Transparent conductors comprising zinc-indium-oxide and methods for making films 失效包含氧化铟锌的透明导体和制造薄膜的方法
公开(公告)号：US5628933A
公开(公告)日：1997-05-13
申请号：US622324
申请日：1996-03-26
CPC分类号： H01B1/08 , C01G15/00 , C01G15/006 , C01G17/006 , C01G19/006 , Y10S420/903
摘要： Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantifies of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.
摘要翻译： 申请人已经发现，其中In是金属元素的40-75％的异氰酸盐掺杂的锌 - 铟氧化物可以实现与目前使用的宽带隙半导体相当的导电性，同时在可见光和红外线都显示增强的透明度。 该材料可以通过小数量的诸如四价原子的低价掺杂剂掺杂到小于1毫欧姆 - 厘米的电阻率。 它可以沉积在玻璃基板上的非晶和多晶膜中。
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