公开(公告)号：US20110256727A1

公开(公告)日：2011-10-20

申请号：US13085531

申请日：2011-04-13

申请人： Julien Beynet ,  Hyung Sang Park ,  Naoki Inoue

发明人： Julien Beynet ,  Hyung Sang Park ,  Naoki Inoue

IPC分类号： H01L21/31

CPC分类号： H01L21/0337 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

摘要翻译： 通过在沉积间隔氧化物的过程中同时进行修整来形成半导体图案。 或者，在紧邻间隔氧化物沉积工艺之前的间隔氧化物沉积工艺之前，进行修整的第一部分，其中进行间隔氧化物沉积，而第二部分的修整与沉积间隔物的过程同时进行 氧化物。 因此，在通过直接等离子体曝光的PR修整期间，形成半导体图形减少PR基础。

公开(公告)号：US08252691B2

公开(公告)日：2012-08-28

申请号：US13085531

申请日：2011-04-13

申请人： Julien Beynet ,  Hyung Sang Park ,  Naoki Inoue

发明人： Julien Beynet ,  Hyung Sang Park ,  Naoki Inoue

IPC分类号： H01L21/311

CPC分类号： H01L21/0337 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

摘要翻译： 通过在沉积间隔氧化物的过程中同时进行修整来形成半导体图案。 或者，在紧邻间隔氧化物沉积工艺之前的间隔氧化物沉积工艺之前，进行修整的第一部分，其中进行间隔氧化物沉积，而第二部分的修整与沉积间隔物的过程同时进行 氧化物。 因此，在通过直接等离子体曝光的PR修整期间，形成半导体图形减少PR基础。