公开(公告)号：US4904340A

公开(公告)日：1990-02-27

申请号：US264564

申请日：1988-10-31

Applicant: Robert F. Miracky ,  Kantesh Doss ,  Bryan Seppala

Inventor： Robert F. Miracky ,  Kantesh Doss ,  Bryan Seppala

IPC: C23F1/02 ,  H05K3/06 ,  H05K3/22 ,  H05K3/38 ,  H05K3/46

CPC classification number: H05K3/06 ,  C23F1/02 ,  H05K2203/0361 ,  H05K2203/107 ,  H05K2203/175 ,  H05K3/225 ,  H05K3/388 ,  H05K3/467

Abstract: A process for laser-assisted liquid phase etching of copper conductors which includes the use of a solution of sulfuric acid and hydrogen peroxide in contact with an integrated circuit substrate and the provision of a laser beam to select substrate areas having copper conductors to be etched. Also disclosed is an apparatus for the laser-assisted etching.

Abstract translation: 一种用于铜导体的激光辅助液相蚀刻的方法，其包括使用与集成电路基板接触的硫酸和过氧化氢溶液，以及提供激光束以选择具有要被蚀刻的铜导体的衬底区域。 还公开了一种用于激光辅助蚀刻的装置。