摘要:
A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD.
摘要:
A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD.