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    METHODS AND APPARATUS FOR A CCD IMAGE SENSOR
    1.
    发明申请
    METHODS AND APPARATUS FOR A CCD IMAGE SENSOR 审中-公开

    公开(公告)号：US20180048835A1

    公开(公告)日：2018-02-15

    申请号：US15235876

    申请日：2016-08-12

    申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    发明人： Shen WANG ,  Eric J. MEISENZAHL ,  Eric G. STEVENS

    IPC分类号： H04N5/359 ,  H04N5/372 ,  H01L27/148

    CPC分类号： H04N5/3591 ,  H01L27/14818 ,  H01L27/14887 ,  H04N5/372

    摘要： Various embodiments of the present technology may comprise methods and apparatus for a CCD image sensor. The image sensor may comprise a center channel disposed along a horizontal center line of the pixel array for collecting and transferring charge. The center channel is electrically coupled to a lateral overflow drain. In various embodiments, the image sensor may comprise a light shield under a gap between neighboring microlenses, such as a gap along the center line, to block light, such as to maintain a uniform, spatial sampling pattern across the device. In various embodiments, the image sensor may comprise a barrier region disposed between the center channel and the lateral overflow drain, for example to prevent charge from the lateral overflow drain being injected back into the center channel and adjacent pixels.

    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    3.
    发明申请
    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20170287957A1

    公开(公告)日：2017-10-05

    申请号：US15626567

    申请日：2017-06-19

    申请人： Sony Corporation

    发明人： Toshifumi Wakano ,  Fumihiko Koga

    IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/357

    CPC分类号： H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

    摘要： Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

    Method of preparing self-aligned isolation regions between sensor elements
    6.
    发明授权
    Method of preparing self-aligned isolation regions between sensor elements 有权
    在传感器元件之间制备自对准隔离区域的方法

    公开(公告)号：US09401384B2

    公开(公告)日：2016-07-26

    申请号：US14877986

    申请日：2015-10-08

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Shih-Chi Fu ,  Kai Tzeng ,  Wen-Chen Lu

    IPC分类号： H01L21/331 ,  H01L21/02 ,  H01L27/148 ,  H01L21/762 ,  H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14887 ,  H01L21/76237 ,  H01L27/1463 ,  H01L27/14654 ,  H01L27/14672 ,  H01L27/14683 ,  H01L27/14689 ,  H01L31/18

    摘要： A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements, wherein a top portion of the deep doped region is below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with the top portion of the deep doped region.

    摘要翻译： 在衬底上的两个相邻传感器元件之间制备自对准隔离区域的方法包括图案化氧化物层以在衬底上的两个相邻传感器元件之间形成开口。 所述方法还包括执行第一注入以在所述两个相邻的传感器元件之间形成深掺杂区域，其中所述深掺杂区域的顶部在所述衬底的顶表面下方。 该方法还包括执行第二注入以在两个相邻传感器元件之间形成浅掺杂区域，其中浅掺杂区域的底部与深掺杂区域的顶部部分重叠。

    Photoelectric conversion apparatus and imaging system using the same
    7.
    发明授权
    Photoelectric conversion apparatus and imaging system using the same 有权

    公开(公告)号：US09276036B2

    公开(公告)日：2016-03-01

    申请号：US14016667

    申请日：2013-09-03

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yu Arishima ,  Takashi Matsuda ,  Toru Koizumi

    IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/359

    CPC分类号： H01L27/14887 ,  H01L27/1463 ,  H04N5/359

    摘要： If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.

    PIXEL STRUCTURES OF CMOS IMAGING SENSORS
    8.
    发明申请
    PIXEL STRUCTURES OF CMOS IMAGING SENSORS 审中-公开
    CMOS成像传感器的像素结构

    公开(公告)号：US20150221686A1

    公开(公告)日：2015-08-06

    申请号：US14685905

    申请日：2015-04-14

    申请人： Semiconductor Manufacturing International (Beijing) Corporation ,  Semiconductor Manufacturing International (Shanghai) Corporation

    发明人： YAN WEI ,  HUALONG SONG ,  YANCHUN MA

    IPC分类号： H01L27/146 ,  H01L29/16 ,  H01L31/028 ,  H01L29/06

    CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14806 ,  H01L27/14831 ,  H01L27/14875 ,  H01L27/14881 ,  H01L27/14887 ,  H01L29/0649 ,  H01L29/16 ,  H01L31/028

    摘要： A method is provided for fabricating a pixel structure of a CMOS transistor. The method includes providing a semiconductor substrate doped with first type doping ions; and forming a trench in the semiconductor substrate by etching the semiconductor substrate. The method also includes forming isolation layers on side surfaces of the trench to prevent dark current from laterally transferring; and forming an epitaxial layer doped with second type doping ions with a doping type opposite to a doping type of the first type doping ions in the trench. Further, the method includes forming a pinning layer on a top surface of the epitaxial layer; and forming a gate structure on a surface of the semiconductor substrate at one side of the epitaxial layer. Further, the method also includes forming a floating diffusion region in the semiconductor substrate at one side of the gate structure far from the epitaxial layer.

    摘要翻译： 提供了一种用于制造CMOS晶体管的像素结构的方法。 该方法包括提供掺杂有第一类掺杂离子的半导体衬底; 以及通过蚀刻所述半导体衬底在所述半导体衬底中形成沟槽。 该方法还包括在沟槽的侧表面上形成隔离层以防止暗电流横向转移; 以及形成掺杂有掺杂类型的第二类型掺杂离子的外延层，所述掺杂类型与所述沟槽中的所述第一类型掺杂离子的掺杂类型相反。 此外，该方法包括在外延层的顶表面上形成钉扎层; 以及在所述外延层的一侧的所述半导体衬底的表面上形成栅极结构。 此外，该方法还包括在远离外延层的栅极结构的一侧在半导体衬底中形成浮动扩散区域。

    SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    9.
    发明申请
    SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
    固态图像拾取元件，其制造方法和电子设备

    公开(公告)号：US20130341684A1

    公开(公告)日：2013-12-26

    申请号：US13972351

    申请日：2013-08-21

    申请人： Sony Corporation

    发明人： Taketo Fukuro ,  Jun Okuno

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14887 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14689

    摘要： A solid-state imaging device, including a semiconductor substrate; a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon; an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region; a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region; a light blocking film over an upper surface of the transfer gate; and an insulating layer over the substrate and between the semiconductor substrate and the light blocking film, wherein, a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region.

    摘要翻译： 一种固体摄像器件，包括半导体衬底; 半导体衬底中的光电转换区域，其响应于入射到其上的光而产生电荷; 电荷保持区域，并且能够保持蓄积在光电转换区域中的电荷，直到电荷从电荷保持区域读出; 使在光电转换区域产生的电荷转移到电荷保持区域的转移门; 在所述传输门的上表面上的遮光膜; 以及在所述基板上以及所述半导体基板和所述遮光膜之间的绝缘层，其中，所述光电转换区域上的所述绝缘层的一部分比不在所述光电转换区域上的绝缘层更薄地形成。

    SOLID STATE IMAGING DEVICE
    10.
    发明申请
    SOLID STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20130285188A1

    公开(公告)日：2013-10-31

    申请号：US13977976

    申请日：2011-11-11

    申请人： Tomohiro Ikeya ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

    发明人： Tomohiro Ikeya ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC分类号： H01L31/02

    CPC分类号： H01L31/02 ,  H01L27/14806 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14887

    摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.

    摘要翻译： 固态成像装置1设置有具有感光区域13的光电转换部分2和与感光区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是由两个 长边和两边。 感光区域13在与长边相交的第一方向上并列。 电位梯度形成部分3具有第一电位梯度形成区域，以形成沿着从短边中的一个短边到另一个的第二方向变低的电位梯度，以及第二电位梯度形成区域，以形成电位梯度 沿着第二个方向变得更高。 第二电位梯度形成区域沿着第二方向布置在第一电位梯度形成区域的旁边。