公开(公告)号：US07782049B2

公开(公告)日：2010-08-24

申请号：US12267169

申请日：2008-11-07

申请人： Kazuhisa Itoi ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

发明人： Kazuhisa Itoi ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

IPC分类号： G01R33/02

CPC分类号： G01R33/09 ,  G01R33/0011 ,  G01R33/02 ,  G01R33/063 ,  G01R33/18 ,  H01L43/12

摘要： A magnetic device comprises a magnetic element, a first magnetic field application device, and a second magnetic field application device. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field application device create a magnetic field in one direction from the first magnetic field application device toward the second magnetic field application device. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field application device.

摘要翻译： 磁性装置包括磁性元件，第一磁场施加装置和第二磁场施加装置。 第一和第二磁场施加装置设置在磁性元件的彼此相对的两侧。 磁性元件例如是在非磁性基板上形成蜿蜒形状的软磁性膜的元件。 第一和第二磁场施加装置在从第一磁场施加装置朝向第二磁场施加装置的一个方向上产生磁场。 因此，一个方向上的偏置磁场被施加到设置在第一和第二磁场施加装置之间的磁性元件中的整个软磁膜。

公开(公告)号：US07429779B2

公开(公告)日：2008-09-30

申请号：US11189134

申请日：2005-07-26

申请人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

发明人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

IPC分类号： H01L43/00

CPC分类号： H01L28/10 ,  Y10T29/49117

摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

公开(公告)号：US20100090692A1

公开(公告)日：2010-04-15

申请号：US12528585

申请日：2008-02-08

申请人： Kazuhisa Itoi ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao

发明人： Kazuhisa Itoi ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao

IPC分类号： G01R33/02

CPC分类号： G01R33/09 ,  G01D5/147 ,  G01R33/0011 ,  G01R33/07 ,  G01R33/072

摘要： A magnetic sensor module which includes: a semiconductor substrate including an integrated circuit for switching operation; a magneto-resistive element which is disposed on a first surface of the semiconductor substrate and has a magneto-sensitive direction in a direction along the first surface; and a bias magnetic field applying member provided on the semiconductor substrate and disposed on a surface which is parallel to the first surface, wherein: the bias magnetic field applying member is magnetized in a direction along the surface on which the bias magnetic field applying member is disposed; and when no external magnetic field is applied, the bias magnetic field applying member applies a bias magnetic field in the direction along the first surface on which the magneto-resistive element is provided.

摘要翻译： 一种磁传感器模块，包括：包括用于切换操作的集成电路的半导体衬底; 磁阻元件，其设置在所述半导体衬底的第一表面上，并且沿着所述第一表面的方向具有磁敏方向; 以及偏置磁场施加构件，其设置在所述半导体基板上并配置在与所述第一面平行的面上，其中：所述偏置磁场施加构件沿着所述偏置磁场施加构件的表面的方向被磁化， 处置 并且当没有施加外部磁场时，偏置磁场施加构件沿着设置有磁阻元件的第一表面的方向施加偏置磁场。

公开(公告)号：US20090066326A1

公开(公告)日：2009-03-12

申请号：US12267169

申请日：2008-11-07

申请人： Kazuhisa ITOI ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

发明人： Kazuhisa ITOI ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

IPC分类号： G01R33/00

CPC分类号： G01R33/09 ,  G01R33/0011 ,  G01R33/02 ,  G01R33/063 ,  G01R33/18 ,  H01L43/12

摘要： A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

摘要翻译： 磁性装置包括磁性元件，第一磁场施加装置和第二磁场施加装置。 第一和第二磁场施加装置设置在磁性元件的彼此相对的两侧。 磁性元件例如是在非磁性基板上以曲折形状形成软磁性膜的元件。 第一和第二磁场施加装置在从第一磁场施加装置朝向第二磁场施加装置的一个方向上产生磁场。 因此，一个方向上的偏置磁场被施加到设置在第一和第二磁场施加装置之间的磁性元件中的整个软磁膜上。

公开(公告)号：US20080203527A1

公开(公告)日：2008-08-28

申请号：US12081960

申请日：2008-04-24

申请人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

发明人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

IPC分类号： H01L29/00

CPC分类号： H01L28/10 ,  Y10T29/49117

摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

摘要翻译： 半导体器件包括其表面上形成有电极的半导体衬底; 第一绝缘树脂层，设置在所述半导体衬底上并且具有限定在对应于所述电极的位置的第一开口; 第一布线层，设置在第一绝缘树脂层上，并通过第一开口连接到电极; 设置在所述第一绝缘树脂层和所述第一布线层上的第二绝缘树脂层，所述第二绝缘树脂层具有限定在与所述第一开口的位置不同的位置的第二开口，所述第二开口沿所述半导体的表面的方向 基质; 以及第二布线层，其设置在所述第二绝缘树脂层上并且通过所述第二开口连接到所述第一布线层，其中所述第二布线层包括感应元件，并且所述第一绝缘树脂层和 第二绝缘树脂层的厚度为5μm以上且60μm以下。

公开(公告)号：US20100109663A1

公开(公告)日：2010-05-06

申请号：US12686840

申请日：2010-01-13

申请人： Kazuhisa ITOI ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

发明人： Kazuhisa ITOI ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

IPC分类号： G01R33/00

CPC分类号： G01R33/09 ,  G01R33/0011 ,  G01R33/02 ,  G01R33/063 ,  G01R33/18 ,  H01L43/12

摘要： A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

摘要翻译： 磁性装置包括磁性元件，第一磁场施加装置和第二磁场施加装置。 第一和第二磁场施加装置设置在磁性元件的彼此相对的两侧。 磁性元件例如是在非磁性基板上以曲折形状形成软磁性膜的元件。 第一和第二磁场施加装置在从第一磁场施加装置朝向第二磁场施加装置的一个方向上产生磁场。 因此，一个方向上的偏置磁场被施加到设置在第一和第二磁场施加装置之间的磁性元件中的整个软磁膜上。

公开(公告)号：US07772841B2

公开(公告)日：2010-08-10

申请号：US12686840

申请日：2010-01-13

申请人： Kazuhisa Itoi ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

发明人： Kazuhisa Itoi ,  Katsubumi Nagasu ,  Takuya Aizawa ,  Osamu Nakao ,  Shigekazu Kawai

IPC分类号： G01R33/02

CPC分类号： G01R33/09 ,  G01R33/0011 ,  G01R33/02 ,  G01R33/063 ,  G01R33/18 ,  H01L43/12

摘要： A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

摘要翻译： 磁性装置包括磁性元件，第一磁场施加装置和第二磁场施加装置。 第一和第二磁场施加装置设置在磁性元件的彼此相对的两侧。 磁性元件例如是在非磁性基板上以曲折形状形成软磁性膜的元件。 第一和第二磁场施加装置在从第一磁场施加装置朝向第二磁场施加装置的一个方向上产生磁场。 因此，一个方向上的偏置磁场被施加到设置在第一和第二磁场施加装置之间的磁性元件中的整个软磁膜上。

公开(公告)号：US20060022287A1

公开(公告)日：2006-02-02

申请号：US11189134

申请日：2005-07-26

申请人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

发明人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

IPC分类号： H01L43/00

CPC分类号： H01L28/10 ,  Y10T29/49117

摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

摘要翻译： 半导体器件包括其表面上形成有电极的半导体衬底; 第一绝缘树脂层，设置在所述半导体衬底上并且具有限定在对应于所述电极的位置的第一开口; 第一布线层，设置在第一绝缘树脂层上，并通过第一开口连接到电极; 设置在所述第一绝缘树脂层和所述第一布线层上的第二绝缘树脂层，所述第二绝缘树脂层具有限定在与所述第一开口的位置不同的位置的第二开口，所述第二开口沿所述半导体的表面的方向 基质; 以及第二布线层，其设置在所述第二绝缘树脂层上并且通过所述第二开口连接到所述第一布线层，其中所述第二布线层包括感应元件，并且所述第一绝缘树脂层和 第二绝缘树脂层的厚度为5μm以上且60μm以下。