公开(公告)号：US06479349B1

公开(公告)日：2002-11-12

申请号：US09636464

申请日：2000-08-11

申请人： Toshiharu Oya ,  Kazumi Kurooka

发明人： Toshiharu Oya ,  Kazumi Kurooka

IPC分类号： H01L21336

CPC分类号： H01L21/28273 ,  H01L29/42324

摘要： To provide a method for fabricating a nonvolatile semiconductor memory device in which the occurrence of a trap site formed in a tunnel oxide film can be suppressed so that W/E cycle of a memory cell transistor can be improved. A tunnel oxide film formed between a floating gate 13 and a control gate is constituted by at least one CVD oxide film formed through chemical vapor-phase growth by a low pressure CVD method, and there is provided a step of heating the CVD oxide film in a nitriding atmosphere containing N2O, NO or NH3.

摘要翻译： 为了提供一种用于制造其中可以抑制在隧道氧化物膜中形成的陷阱位置的发生的非易失性半导体存储器件的制造方法，从而可以提高存储单元晶体管的W / E周期。 在浮栅13和控制栅之间形成的隧道氧化膜由通过低压CVD法的化学气相生长形成的至少一个CVD氧化膜构成，并且提供了将CVD氧化膜加热 含有N2O，NO或NH3的氮化气氛。

公开(公告)号：US5936883A

公开(公告)日：1999-08-10

申请号：US825109

申请日：1997-03-27

申请人： Kazumi Kurooka ,  Kenji Fukase

发明人： Kazumi Kurooka ,  Kenji Fukase

IPC分类号： G11C16/04 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  G11C13/00

CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825

摘要： Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.

摘要翻译： 分离栅型晶体管通过以下步骤制成：形成半导体衬底; 在所述半导体衬底上形成具有至少一个侧面部分的所述浮栅电极; 并且对所述至少一个侧面部分进行硝化以形成含氮层。

公开(公告)号：US20070188981A1

公开(公告)日：2007-08-16

申请号：US11711050

申请日：2007-02-27

申请人： Kazuhiro Takatani ,  Kazumi Kurooka ,  Tomoko Omori ,  Mutsumi Yano ,  Takashi Umemoto ,  Hiroshi Nonoue

发明人： Kazuhiro Takatani ,  Kazumi Kurooka ,  Tomoko Omori ,  Mutsumi Yano ,  Takashi Umemoto ,  Hiroshi Nonoue

IPC分类号： H01G9/00

CPC分类号： H01G9/07 ,  H01G9/0032 ,  H01G9/042 ,  H01G9/15

摘要： A solid electrolytic capacitor includes an anode and a dielectric layer. The anode is made of niobium or a niobium alloy. The dielectric layer is made of niobium oxide formed on the niobium or the niobium alloy. The niobium oxide has a feature that a full width at half maximum of a peak of an Mz ray of characteristic X-rays of niobium is 0.98 Å or more. The characteristic X-rays are emitted when the niobium oxide is irradiated with an electron beam.

摘要翻译： 固体电解电容器包括阳极和电介质层。 阳极由铌或铌合金制成。 介电层由在铌或铌合金上形成的氧化铌制成。 铌氧化物具有铌的特征X射线的Mz射线的峰的半值全宽为0.98以上的特征。 当用电子束照射铌氧化物时，发射特征X射线。

公开(公告)号：US06184088B2

公开(公告)日：2001-02-06

申请号：US09258243

申请日：1999-02-25

申请人： Kazumi Kurooka ,  Kenji Fukase

发明人： Kazumi Kurooka ,  Kenji Fukase

IPC分类号： H01L218247

CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825

摘要： A method for manufacturing a split gate type transistors includes the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrate, the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.

摘要翻译： 一种分离栅型晶体管的制造方法包括以下步骤：形成半导体衬底; 在所述半导体衬底上形成浮栅电极，所述浮栅电极具有至少一个侧面部分; 并且对所述至少一个侧面部分进行硝化以形成含氮层。