公开(公告)号：US20100055858A1

公开(公告)日：2010-03-04

申请号：US12516858

申请日：2008-07-18

申请人： Masashi Hayashi ,  Kazuya Utusnomiya ,  Osamu Kusumoto

发明人： Masashi Hayashi ,  Kazuya Utusnomiya ,  Osamu Kusumoto

IPC分类号： H01L21/336

CPC分类号： H01L29/7828 ,  H01L21/0485 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7802 ,  Y10S438/931

摘要： A semiconductor device according to the present invention includes a silicon carbide semiconductor substrate having a silicon carbide semiconductor layer; a p-type impurity region provided in the silicon carbide semiconductor layer and including a p-type impurity; a p-type ohmic electrode electrically connected to the p-type impurity region; an n-type impurity region provided in the silicon carbide semiconductor layer adjacent to the p-type impurity region, and including an n-type impurity; and an n-type ohmic electrode electrically connected to the n-type impurity region. The p-type ohmic electrode contains an alloy of nickel, aluminum, silicon and carbon, and the n-type ohmic electrode contains an alloy of titanium, silicon and carbon.

摘要翻译： 根据本发明的半导体器件包括具有碳化硅半导体层的碳化硅半导体衬底; 设置在碳化硅半导体层中并包含p型杂质的p型杂质区; 电连接到p型杂质区的p型欧姆电极; 设置在与所述p型杂质区相邻的所述碳化硅半导体层中的n型杂质区，并且包含n型杂质; 和与n型杂质区电连接的n型欧姆电极。 p型欧姆电极含有镍，铝，硅和碳的合金，n型欧姆电极含有钛，硅和碳的合金。