公开(公告)号：US07589347B2

公开(公告)日：2009-09-15

申请号：US11632934

申请日：2005-08-02

Applicant: Geoffrey Richard Nash ,  John Henry Jefferson ,  Keith James Nash

Inventor： Geoffrey Richard Nash ,  John Henry Jefferson ,  Keith James Nash

IPC: H01L31/00

CPC classification number: H01L33/02 ,  H01L33/20 ,  H01S5/0424

Abstract: A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure having a stack formed by a plurality of layers of semiconductor material arranged in a series of substantially parallel planes, the semiconductor material within a first layer having an excess of charge carriers of a first polarity at a first concentration, and selectively removing semiconductor material from the first layer to a depth which varies along a first direction substantially parallel with the planes of the layers within the structure, so as to provide a gradation of the concentration of charge carriers of first polarity within an active layer along the first direction. A photon source comprising said lateral junction semiconductor device.

Abstract translation: 一种横向结半导体器件及其制造方法，包括以下步骤：获取半导体结构，所述半导体结构具有由布置在一系列基本上平行的平面中的多层半导体材料形成的叠层，所述半导体材料在第一层内具有过量的 的具有第一浓度的第一极性的电荷载体，并且将半导体材料从第一层选择性地移除到沿着基本上平行于结构内的层的平面的第一方向变化的深度，以便提供 沿着第一方向在有源层内的第一极性的电荷载流子的浓度。 一种包括所述横向结半导体器件的光子源。