公开(公告)号：US11921298B2

公开(公告)日：2024-03-05

申请号：US17028942

申请日：2020-09-22

Applicant: II-VI DELAWARE, INC.

Inventor： Yasuhiro Matsui ,  Shiyun Lin ,  David Adams

IPC: H01S5/026 ,  G02B6/10 ,  G02B6/122 ,  G02B27/09 ,  H01S5/042 ,  H01S5/12 ,  H01S5/22

CPC classification number: G02B27/095 ,  G02B6/10 ,  G02B6/1228 ,  H01S5/026 ,  H01S5/12 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/0424

Abstract: A spot-size converter includes first and second waveguide structures. The first waveguide structure extends longitudinally along a waveguide axis from a first end to a second end and is configured to support a first optical mode at the first end. The second waveguide structure is formed within the first waveguide structure. The second waveguide structure extends longitudinally between the first end and the second end. The second waveguide structure is configured to support a second optical mode at the second end. The second optical mode has a different diameter than the first optical mode. The second waveguide structure includes a waveguide core that has a first cross-sectional area in a first plane normal to the waveguide axis at the first end and a second cross-sectional area in a second plane normal to the waveguide axis at the second end. The second cross-sectional area is larger than the first cross-sectional area.

公开(公告)号：US11855411B2

公开(公告)日：2023-12-26

申请号：US17369789

申请日：2021-07-07

Applicant: Board of Regents, The University of Texas System

Inventor： Weidong Zhou ,  Xiaochen Ge

IPC: H01S3/08 ,  H01S5/042 ,  H01S5/026 ,  H01S5/10 ,  H01S5/11 ,  H01S5/12

CPC classification number: H01S5/0424 ,  H01S5/026 ,  H01S5/1021 ,  H01S5/1042 ,  H01S5/1067 ,  H01S5/11 ,  H01S5/12

Abstract: In one embodiment, a nanobeam cavity device includes an elongated waveguide having a central optical cavity, first and second lateral substrates that are positioned on opposed lateral sides of the waveguide, and carrier-injection beams that extend from the first and second lateral substrates to the central optical cavity of the elongated waveguide.

公开(公告)号：US11804696B2

公开(公告)日：2023-10-31

申请号：US16973458

申请日：2019-06-12

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/22 ,  H01S5/02 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042

CPC classification number: H01S5/22 ,  H01S5/0202 ,  H01S5/026 ,  H01S5/0282 ,  H01S5/0424

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

公开(公告)号：US20190131772A1

公开(公告)日：2019-05-02

申请号：US15800339

申请日：2017-11-01

Applicant: International Business Machines Corporation

Inventor： Charles Caër ,  Lukas Czornomaz ,  Stefan Abel ,  Bert Jan Offrein

IPC: H01S5/20 ,  H01S5/30 ,  H01S5/026 ,  H01S5/227 ,  H01S5/10 ,  H01S5/125 ,  H01S5/343

CPC classification number: H01S5/2031 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1028 ,  H01S5/125 ,  H01S5/227 ,  H01S5/3054 ,  H01S5/343

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

公开(公告)号：US20180331504A1

公开(公告)日：2018-11-15

申请号：US16030417

申请日：2018-07-09

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM

IPC: H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/40 ,  H01S5/10 ,  H01S5/04 ,  H01S5/187

CPC classification number: H01S5/3223 ,  H01S5/021 ,  H01S5/041 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/187 ,  H01S5/3086 ,  H01S5/3224 ,  H01S5/4006

Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.

公开(公告)号：US10038302B2

公开(公告)日：2018-07-31

申请号：US15450400

申请日：2017-03-06

Applicant: THE UNIVERSITY OF CONNECTICUT ,  Opel Solar, Inc.

Inventor： Geoff W. Taylor

IPC: H01S5/10 ,  G02B6/293 ,  G02B6/134 ,  G02B6/13 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/30 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/112 ,  H01L31/11 ,  H01L31/0232 ,  H01L31/18 ,  H01S5/343

CPC classification number: H01S5/1071 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1443 ,  H01L29/083 ,  H01L29/1066 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66401 ,  H01L29/74 ,  H01L29/7783 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/1129 ,  H01L31/1844 ,  H01L33/06 ,  H01L33/105 ,  H01S5/0228 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/0625 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/34313

Abstract: A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.

公开(公告)号：US09625647B2

公开(公告)日：2017-04-18

申请号：US14222841

申请日：2014-03-24

Applicant: Opel Solar, Inc. ,  The University of Connecticut

Inventor： Geoff W. Taylor

IPC: H01L29/10 ,  G02B6/134 ,  H01L27/144 ,  H01L31/0352 ,  H01S5/042 ,  H01L29/66 ,  H01L29/74 ,  H01L21/8252 ,  H01L29/778 ,  H01L27/06 ,  H01L27/085 ,  H01L31/111 ,  H01L33/10 ,  H01S5/0625 ,  H01S5/343 ,  H01S5/062 ,  H01S5/10 ,  H01S5/20 ,  H01S5/30 ,  H01S5/22

CPC classification number: H01S5/1071 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1443 ,  H01L29/083 ,  H01L29/1066 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66401 ,  H01L29/74 ,  H01L29/7783 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/1129 ,  H01L31/1844 ,  H01L33/06 ,  H01L33/105 ,  H01S5/0228 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/0625 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/34313

Abstract: A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer and first modulation doped quantum well structure disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed.

公开(公告)号：US20150155682A1

公开(公告)日：2015-06-04

申请号：US14575441

申请日：2014-12-18

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： DI LIANG

IPC: H01S3/136

CPC classification number: H01S3/136 ,  H01S3/10 ,  H01S5/021 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06203 ,  H01S5/06213 ,  H01S5/06216 ,  H01S5/06226 ,  H01S5/0624 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/176

Abstract: One example includes a laser system. The system can include a first electrode to transmit first electrical carriers into an active region via a first waveguide region in response to a current signal. The system also includes a second electrode to transmit second electrical carriers into the active region via a second waveguide region in response to the current signal. The first and second electrical carriers can be combined in the active region to emit photons to generate an optical signal. The system further includes a third electrode responsive to a signal to affect a concentration of third electrical carriers in a device layer located proximal to the second waveguide region to modulate an optical characteristic of the optical signal.

Abstract translation: 一个例子包括激光系统。 该系统可以包括第一电极，以响应于电流信号经由第一波导区域将第一电载体传输到有源区。 该系统还包括第二电极，用于响应于电流信号经由第二波导区域将第二电载体传输到有源区。 第一和第二电载体可以在有源区域中组合以发射光子以产生光信号。 该系统还包括响应于信号的第三电极，以影响位于第二波导区域附近的器件层中的第三电载体的浓度，以调制光信号的光学特性。

公开(公告)号：US08767792B2

公开(公告)日：2014-07-01

申请号：US13838932

申请日：2013-03-15

Applicant: John E. Bowers ,  Oded Cohen ,  Alexander W. Fang ,  Richard Jones ,  Mario J. Paniccia ,  Hyundai Park

Inventor： John E. Bowers ,  Oded Cohen ,  Alexander W. Fang ,  Richard Jones ,  Mario J. Paniccia ,  Hyundai Park

IPC: H01S3/091 ,  H01S3/094

CPC classification number: H01S5/30 ,  G02B2006/12121 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/141 ,  H01S5/2214 ,  H01S5/223 ,  H01S5/34

Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到 注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。 公开和要求保护其他实施例。

公开(公告)号：US20140175490A1

公开(公告)日：2014-06-26

申请号：US14127837

申请日：2012-06-12

Applicant: Yuji Suwa ,  Shinichi Saito ,  Etsuko Nomoto ,  Makoto Takahashi

Inventor： Yuji Suwa ,  Shinichi Saito ,  Etsuko Nomoto ,  Makoto Takahashi

IPC: H01L33/36

CPC classification number: H01L33/36 ,  H01L33/0054 ,  H01L33/06 ,  H01L33/20 ,  H01L33/34 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/3224

Abstract: Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.

Abstract translation: 提供了一种元件结构，由此可以在发光区域内产生包围注入载体的硅锗发光元件。 还提供了一种制造该结构的方法。 在发光区域和电极之间，为载体产生窄通道，具体地说，是一维或二维量子限制区域。 由于量子限制，在该部分中带隙打开，由此形成电子和空穴的能量势垒，并且提供类似于普通III-V族半导体激光器中的双异质结构的效果。 由于不使用在普通硅工艺中使用的化学元素以外的化学元素，所以可以通过简单地控制元件的形状来廉价地制造元件。