Semiconductor Inspecting Apparatus
    1.
    发明申请
    Semiconductor Inspecting Apparatus 审中-公开
    半导体检测仪器

    公开(公告)号:US20130136334A1

    公开(公告)日:2013-05-30

    申请号:US13807707

    申请日:2011-05-18

    IPC分类号: G06T7/00

    摘要: A semiconductor inspecting apparatus which is provided with an inspecting unit, a detecting unit, and a processing unit, which processes an image on the basis of reflection light detected by the detecting unit, and which inspects the surface of the subject to be inspected. The processing unit is provided with an image distribution control unit, which distributes the image, and an image processing unit, which processes the image distributed by the image distribution control unit. The image distribution control unit has and image buffer counter, which counts the input image quantity of the image; a distribution control table, which stores information relating to the image; and a distribution timing control circuit, which determines distribution start timing of the image on the basis of the input image quantity and the information relating to the image obtained from the distribution control table.

    摘要翻译: 一种具有检查单元,检测单元和处理单元的半导体检查装置,其基于由检测单元检测到的反射光来处理图像,并且检查被检查物体的表面。 处理单元设置有分配图像的图像分配控制单元和处理由图像分配控制单元分发的图像的图像处理单元。 图像分配控制单元具有对图像的输入图像量进行计数的图像缓冲计数器; 分配控制表,其存储与图像有关的信息; 以及分配定时控制电路,其基于输入图像量和与从分发控制表获得的图像相关的信息来确定图像的分布开始定时。

    Measurement method of electron beam current, electron beam lithography method and system
    2.
    发明申请
    Measurement method of electron beam current, electron beam lithography method and system 审中-公开
    电子束电流测量方法,电子束光刻方法及系统

    公开(公告)号:US20060011869A1

    公开(公告)日:2006-01-19

    申请号:US11180629

    申请日:2005-07-14

    IPC分类号: G21G5/00 G21K5/10

    摘要: In an electron-beam lithography system for performing a pattern drawing by causing electron beams to be switched ON/OFF at a high speed in an exposure/non-exposure portion, non-straight line property of beam shot dosage relative to beam ON time worsens dimension accuracy of the drawing pattern formed on a sample. In order to avoid this drawback, the characteristic of the beam shot dosage relative to the beam ON time is measured in advance, thereby creating correction data for the beam ON time beforehand. Then, at the time of performing the pattern drawing, the beam ON time is corrected based on the correction data so that desired beam shot dosage becomes acquirable.

    摘要翻译: 在曝光/非曝光部分中通过使电子束以高速切换ON / OFF进行图形绘制的电子束光刻系统中,射束投射量相对于光束ON时间的非直线特性恶化 在样品上形成的绘图图形的尺寸精度。 为了避免这种缺点,预先测定射束投射量相对于光束导通时间的特性,从而事先产生光束接通时间的校正数据。 然后,在执行图形绘制时,基于校正数据校正光束接通时间,使得期望的射束剂量变得可获得。