公开(公告)号：US07229502B2

公开(公告)日：2007-06-12

申请号：US10710193

申请日：2004-06-24

Applicant: Ching-Tang Wang ,  Chin-Tung Niao ,  Keng-Hui Su ,  Huang-Sheng Chiu ,  Min-Hsin Wang

Inventor： Ching-Tang Wang ,  Chin-Tung Niao ,  Keng-Hui Su ,  Huang-Sheng Chiu ,  Min-Hsin Wang

IPC: C23C16/00

CPC classification number: H01L21/0217 ,  H01L21/02271 ,  H01L21/3185

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract translation: 提供了形成氮化硅层的方法。 提供具有外管，晶片舟，气体注入器和均匀气体注入装置的沉积炉。 晶片舟定位在外管内用于承载多个晶片。 气体喷射器位于外管和晶片舟之间。 类似地，均匀气体注入装置位于外管和晶片舟之间。 注入均匀气体注入装置的气体均匀分布在整个沉积炉中。 为了在每个晶片上形成氮化硅层，通过气体注入器将含硅气体进入沉积炉，并且氮混合载气通过均匀气体注入装置进入沉积炉。

公开(公告)号：US20060177949A1

公开(公告)日：2006-08-10

申请号：US11052806

申请日：2005-02-09

Applicant: Mao-Chan Chiu ,  May-Jun Chou ,  Ching-Tang Wang ,  Keng-Hui Su

Inventor： Mao-Chan Chiu ,  May-Jun Chou ,  Ching-Tang Wang ,  Keng-Hui Su

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: A method for monitoring oxide film deposition is disclosed. The method utilizes silicon wafers having silicon nitride films thereon instead of bare silicon wafers to monitor the growth of silicon oxide/dioxide films in a furnace. The method for monitoring oxide film deposition comprises the following steps. First of all, a wafer having silicon nitride film and a silicon wafer are provided. Next an oxide layer is formed on the wafer and the silicon wafer, and the thickness of the oxide layer is controlled substantially equally on the wafer and the silicon wafer. Then the thickness of the oxide layer on the wafer and the silicon wafer is measured.

Abstract translation: 公开了一种用于监测氧化膜沉积的方法。 该方法利用其上具有氮化硅膜的硅晶片代替裸硅晶片来监测炉中氧化硅/二氧化物膜的生长。 用于监测氧化膜沉积的方法包括以下步骤。 首先，提供具有氮化硅膜和硅晶片的晶片。 接下来，在晶片和硅晶片上形成氧化物层，并且在晶片和硅晶片上基本上均匀地控制氧化物层的厚度。 然后测量晶片和硅晶片上的氧化物层的厚度。

公开(公告)号：US20050266696A1

公开(公告)日：2005-12-01

申请号：US10710193

申请日：2004-06-24

Applicant: Ching-Tang Wang ,  Chin-Tung Niao ,  Keng-Hui Su ,  Huang-Sheng Chiu ,  Min-Hsin Wang

Inventor： Ching-Tang Wang ,  Chin-Tung Niao ,  Keng-Hui Su ,  Huang-Sheng Chiu ,  Min-Hsin Wang

IPC: H01L21/31 ,  H01L21/318 ,  H01L21/76

CPC classification number: H01L21/0217 ,  H01L21/02271 ,  H01L21/3185

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract translation: 提供了形成氮化硅层的方法。 提供一种具有外管，晶片舟，气体注入器和均匀气体注入装置的沉积炉。 晶片舟定位在外管内用于承载多个晶片。 气体喷射器位于外管和晶片舟之间。 类似地，均匀气体注入装置位于外管和晶片舟之间。 注入均匀气体注入装置的气体均匀分布在整个沉积炉中。 为了在每个晶片上形成氮化硅层，通过气体注入器将含硅气体送入沉积炉，并且氮气混合的载气通过均匀的气体注入装置进入沉积炉。

公开(公告)号：US07407820B2

公开(公告)日：2008-08-05

申请号：US11052806

申请日：2005-02-09

Applicant: Mao-Chan Chiu ,  May-Jun Chou ,  Ching-Tang Wang ,  Keng-Hui Su

Inventor： Mao-Chan Chiu ,  May-Jun Chou ,  Ching-Tang Wang ,  Keng-Hui Su

IPC: H01L21/469

CPC classification number: H01L22/12

Abstract: A method for monitoring oxide film deposition is disclosed. The method utilizes monitor wafers having silicon nitride films thereon instead of bare wafers to monitor the growth of silicon oxide films in a furnace. The method for monitoring oxide film deposition includes the following steps. First of all, a monitor wafer having silicon nitride film and a process wafer are provided. Next an oxide layer is formed on the monitor wafer and the process wafer, and the thickness of the oxide layer is controlled substantially equally on the monitor wafer and the process wafer. Then the thickness of the oxide layer on the monitor wafer and the process wafer is measured.

Abstract translation: 公开了一种用于监测氧化膜沉积的方法。 该方法利用其上具有氮化硅膜的监测晶片代替裸晶片来监测氧化硅膜在炉中的生长。 用于监测氧化膜沉积的方法包括以下步骤。 首先，提供具有氮化硅膜和工艺晶片的监视器晶片。 接下来，在监视器晶片和处理晶片上形成氧化物层，并且在监视晶片和处理晶片上基本上均匀地控制氧化物层的厚度。 然后测量监视晶片和处理晶片上的氧化物层的厚度。