公开(公告)号：US20110237051A1

公开(公告)日：2011-09-29

申请号：US12748368

申请日：2010-03-26

申请人： Kenneth Lee Hess ,  Simon Charles Stewart Thomas ,  Johannes Kappeler

发明人： Kenneth Lee Hess ,  Simon Charles Stewart Thomas ,  Johannes Kappeler

IPC分类号： H01L21/205

CPC分类号： C23C16/452 ,  C23C16/303 ,  H01J37/3244 ,  H01L21/0242 ,  H01L21/02538 ,  H01L21/0262

摘要： A deposition process involves the formation of multicomponent semiconductor layers, in particular III-V epitaxial layers, on a substrate. Due to pyrolytic decomposition inside the reaction chamber, one of the process gases forms a first decomposition product. Together with a second decomposition product of a second process gas, the decomposition products form a layer on the surface of a heated substrate and also adhere to surfaces of the process chamber. To remove these adherences, during an etching step a purge gas containing a reactive substance formed by free radicals is introduced into the process chamber. The etching step may be performed before or after the deposition process.

摘要翻译： 沉积工艺涉及在衬底上形成多组分半导体层，特别是III-V外延层。 由于反应室内的热分解，其中一种工艺气体形成第一分解产物。 与第二工艺气体的第二分解产物一起，分解产物在加热的基材的表面上形成一层，并且还附着在处理室的表面上。 为了去除这些粘附物，在蚀刻步骤期间，将含有由自由基形成的反应物质的吹扫气体引入处理室。 蚀刻步骤可以在沉积工艺之前或之后进行。