公开(公告)号：US12027363B2

公开(公告)日：2024-07-02

申请号：US17661966

申请日：2022-05-04

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Farrell M. Good

IPC: H01L21/02 ,  C01B32/00 ,  C01B33/00 ,  C23C16/04 ,  C23C16/452

CPC classification number: H01L21/02167 ,  C01B32/00 ,  C01B33/00 ,  C23C16/045 ,  C23C16/452 ,  H01L21/02274 ,  H01L21/02381 ,  H01L2221/1047

Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

公开(公告)号：US11802053B2

公开(公告)日：2023-10-31

申请号：US17300384

申请日：2021-06-10

Applicant: Daniel Hodes

Inventor： Daniel Hodes

IPC: C01B32/26 ,  C01B32/28 ,  C23C16/27 ,  C23C16/452 ,  H05H15/00 ,  C01B32/25 ,  H01J37/32

CPC classification number: C01B32/26 ,  C01B32/28 ,  C23C16/274 ,  C23C16/276 ,  C23C16/452 ,  H05H15/00 ,  C01B32/25 ,  C01P2006/80 ,  H01J37/32192

Abstract: An apparatus for fabricating diamond by carbon assembly, which comprises:



a) a hydrocarbon radical generator in operable connection with
b) a mass flow conduit extending from the hydrocarbon radical generator in a) to an interface and into a primary magnetic accelerator containing one or more electromagnets in operable connection with
c) a diamond fabrication reactor comprising a diamond forming deposition substrate.




Also disclosed is a method for fabricating diamond by shockwaves using the disclosed apparatus.

公开(公告)号：US11732350B2

公开(公告)日：2023-08-22

申请号：US17704574

申请日：2022-03-25

Applicant: Novellus Systems, Inc.

Inventor： Bhadri N. Varadarajan

IPC: C23C16/32 ,  C23C16/452 ,  C23C16/505 ,  H01L21/02 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/325 ,  C23C16/452 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274

Abstract: Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.

公开(公告)号：US20180330945A1

公开(公告)日：2018-11-15

申请号：US16044371

申请日：2018-07-24

Applicant: Lam Research Corporation

Inventor： Bhadri N. Varadarajan ,  Matthew Scott Weimer ,  Galbokka Hewage Layan Savithra ,  Bo Gong ,  Zhe Gui

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/045 ,  C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L2221/1047

Abstract: A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

公开(公告)号：US20180327892A1

公开(公告)日：2018-11-15

申请号：US15965810

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Inventor： Xiaowei Wu ,  David Fenwick ,  Guodong Zhan ,  Jennifer Y. Sun ,  Michael R. Rice

IPC: C23C4/18 ,  C23C4/134 ,  C23C4/11 ,  C23C14/08 ,  C23C14/22 ,  C23C16/40 ,  C23C16/455 ,  C23C14/58 ,  C23C16/56

CPC classification number: C23C16/405 ,  C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  C23C14/081 ,  C23C14/221 ,  C23C14/5826 ,  C23C14/5846 ,  C23C16/28 ,  C23C16/403 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32908 ,  H01J37/32963 ,  H01J2237/332 ,  H01J2237/334

Abstract: An article comprises a body having a coating. The coating comprises a Y—O—F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

公开(公告)号：US20180240676A1

公开(公告)日：2018-08-23

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/768 ,  H01L21/28 ,  C23C16/14

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/4584 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US09978564B2

公开(公告)日：2018-05-22

申请号：US14853838

申请日：2015-09-14

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  H01J37/32 ,  B05B1/00 ,  C23C16/452

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20180135202A1

公开(公告)日：2018-05-17

申请号：US15738458

申请日：2016-06-16

Applicant: Georgia Tech Research Corporation

Inventor： William Alan Doolittle ,  Evan A. Clinton ,  Chloe A.M. Fabien ,  Brendan Patrick Gunning ,  Joseph J. Merola

IPC: C30B23/02 ,  C30B29/40 ,  C30B31/06 ,  C23C14/22 ,  C23C14/06 ,  H01L21/02

CPC classification number: C30B23/025 ,  C23C14/0641 ,  C23C14/221 ,  C23C16/303 ,  C23C16/452 ,  C23C16/50 ,  C30B23/02 ,  C30B29/406 ,  C30B31/06 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved.

公开(公告)号：US20180122647A1

公开(公告)日：2018-05-03

申请号：US15802040

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L21/28568 ,  C23C16/04 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/67167

Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US20180073147A1

公开(公告)日：2018-03-15

申请号：US15413899

申请日：2017-01-24

Applicant: Yu-Shun CHANG

Inventor： Yu-Shun CHANG

IPC: C23C16/511 ,  C23C16/505 ,  C23C16/503 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/511 ,  C23C16/452 ,  C23C16/455 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/503 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32357

Abstract: A remote plasma generator of a remote plasma-enhanced chemical vapor deposition (PECVD) system is revealed. A direct current (DC) discharge unit, a radiofrequency (RF) discharge unit and a microwave discharge unit are arranged at the remote plasma generator separately. Source materials or process gas introduced into the remote plasma generator are/is excited by synchronous discharging of the DC discharge unit, the RF discharge unit and the microwave discharge unit to generate a plasma source required. The efficiency in use and the efficiency in manufacturing process of the remote PECVD are improved.