公开(公告)号：US4125672A

公开(公告)日：1978-11-14

申请号：US760374

申请日：1977-01-19

申请人： Masami Kakuchi ,  Shungo Sugawara ,  Kei Murase ,  Kentaro Matsuyama

发明人： Masami Kakuchi ,  Shungo Sugawara ,  Kei Murase ,  Kentaro Matsuyama

IPC分类号： G03F7/004 ,  C08F20/00 ,  C08F20/22 ,  G03F7/039 ,  H01F41/34 ,  H01L21/027 ,  B05D3/06

CPC分类号： G03F7/039 ,  H01F41/34 ,  Y10T428/3154 ,  Y10T428/31667

摘要： A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein the prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a halogenated polymethacrylic ester whose composition is expressed by the general formula ##STR1## (WHERE R denotes a halogenated alkyl radical including a halogen element selected from the group consisting of fluorine, chlorine and bromine, and at least one fluorine atom in case said radical contains chlorine or bromine and n indicates an average polymerization degree of 100 to 20,000) and an organic solvent for said halogenated polymethacrylate.

摘要翻译： 薄膜涂覆在半导体衬底上的聚合物抗蚀剂掩模组合物，其中所述抗蚀剂掩模的规定部分暴露于诸如电子束，X射线或紫外线的高能射线以降解，并且去除抗蚀剂掩模的劣化部分 通过有机溶剂在半导体衬底上呈现规定的抗蚀剂掩模图案，其包含卤化聚甲基丙烯酸酯，其组成由通式“IMAGE”表示（其中R表示包含选自以下的卤素元素的卤代烷基： 氟，氯和溴，以及在所述基团含有氯或溴的情况下至少一个氟原子，n表示平均聚合度为100至20,000）和所述卤代聚甲基丙烯酸酯的有机溶剂。