公开(公告)号：US07126972B2

公开(公告)日：2006-10-24

申请号：US10250200

申请日：2003-06-12

Applicant: Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

Inventor： Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

IPC: H01S3/04 ,  H01S5/00 ,  H01S3/20

CPC classification number: H01S5/32341 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/3211 ,  H01S2304/12

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract translation: 提出了一种包括具有光栅结构的选择性生长掩模的氮化物基半导体激光二极管器件。 在半导体激光器结构的有源层上由选择性生长掩模形成包括P型覆层的岛状堆叠的外延层。 这种提出的结构可以通过隔离结构的变形来减小应变。 因此，可以实现在岛状堆叠的外延层中存在裂纹的情况下，可以实现包覆层的厚度的增加和/或组成差异的增加。 可以有效地提高光学限制。

公开(公告)号：US07233610B2

公开(公告)日：2007-06-19

申请号：US10908825

申请日：2005-05-27

Applicant: Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

Inventor： Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

IPC: H01S5/00 ,  H01S3/20

CPC classification number: H01S5/32341 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/3211 ,  H01S2304/12

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract translation: 提出了一种包括具有光栅结构的选择性生长掩模的氮化物基半导体激光二极管器件。 在半导体激光器结构的有源层上由选择性生长掩模形成包括P型覆层的岛状堆叠的外延层。 这种提出的结构可以通过隔离结构的变形来减小应变。 因此，可以实现在岛状堆叠的外延层中存在裂纹的情况下，可以实现包覆层的厚度的增加和/或组成差异的增加。 可以有效地提高光学限制。

公开(公告)号：US20050199893A1

公开(公告)日：2005-09-15

申请号：US10908825

申请日：2005-05-27

Applicant: Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

Inventor： Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/32341 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/3211 ,  H01S2304/12

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract translation: 提出了一种包括具有光栅结构的选择性生长掩模的氮化物基半导体激光二极管器件。 在半导体激光器结构的有源层上由选择性生长掩模形成包括P型覆层的岛状堆叠的外延层。 这种提出的结构可以通过隔离结构的变形来减小应变。 因此，可以实现在岛状堆叠的外延层中存在裂纹的情况下，可以实现包覆层的厚度的增加和/或组成差异的增加。 可以有效地提高光学限制。