公开(公告)号：US10008827B2

公开(公告)日：2018-06-26

申请号：US15000975

申请日：2016-04-04

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/00 ,  H01S5/187 ,  H01L31/0352 ,  H01S5/22 ,  H01S5/32 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/34 ,  H01L27/146 ,  H01S5/227

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/187 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US20180090911A1

公开(公告)日：2018-03-29

申请号：US15562462

申请日：2016-04-08

申请人： University of Houston System

发明人： Jae-Hyun Ryou ,  Shahab Shervin ,  Seung Hwan Kim

IPC分类号： H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01S5/3201 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/4908 ,  H01L29/7786 ,  H01L29/7845 ,  H01L29/84 ,  H01L33/02 ,  H01L33/486 ,  H01S5/32391 ,  H01S5/3406

摘要： Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

公开(公告)号：US09653639B2

公开(公告)日：2017-05-16

申请号：US13368162

申请日：2012-02-07

申请人： Birendra Dutt

发明人： Birendra Dutt

IPC分类号： H01L21/00 ,  H01L31/109 ,  H01L29/165 ,  H01L31/18 ,  H01S5/026 ,  H01S5/10 ,  H01S5/30 ,  H01S5/32 ,  H01S5/227 ,  H01S5/02 ,  H01S5/20

CPC分类号： H01L31/109 ,  H01L29/165 ,  H01L31/1804 ,  H01L31/1812 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/2063 ,  H01S5/2272 ,  H01S5/3027 ,  H01S5/3201 ,  Y02E10/547 ,  Y02P70/521

摘要： The subject matter disclosed herein relates to formation of silicon germanium devices with tensile strain. Tensile strain applied to a silicon germanium device in fabrication may improve performance of a silicon germanium laser or light detector.

公开(公告)号：US09608160B1

公开(公告)日：2017-03-28

申请号：US15016799

申请日：2016-02-05

申请人： International Business Machines Corporation

发明人： Can Bayram ,  Cheng-Wei Cheng ,  Tayfun Gokmen ,  Ning Li ,  John A. Ott ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC分类号： H01L29/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L33/22 ,  H01L33/18 ,  H01L33/36

CPC分类号： H01L33/007 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/12 ,  H01L33/16 ,  H01L33/18 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L2933/0016 ,  H01S5/021 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/34333

摘要： After forming patterned dielectric material structures over a (100) silicon substrate, portions of the silicon substrate that are not covered by the patterned dielectric material structures are removed to provide a plurality of openings within the silicon substrate. Each opening exposes a surface of the silicon substrate having a (111) crystalline plane. A buffer layer is then formed on the exposed surfaces of the patterned dielectric material structures and the silicon substrate. A dual phase Group III nitride structure including a cubic phase region is formed filling a space between each neighboring pair of the patterned dielectric material structures and one of the openings located beneath the space. Finally, at least one Group III nitride layer is epitaxially deposited over the cubic phase region of the dual phase Group III nitride structure.

公开(公告)号：US09397262B2

公开(公告)日：2016-07-19

申请号：US13056724

申请日：2009-07-21

申请人： Stephan Lutgen ,  Christoph Eichler ,  Marc Schillgalies ,  Desiree Queren

发明人： Stephan Lutgen ,  Christoph Eichler ,  Marc Schillgalies ,  Desiree Queren

IPC分类号： H01L33/00 ,  H01L33/24 ,  H01L21/02 ,  H01S5/223 ,  H01L33/48 ,  H01L31/0236 ,  H01L33/62 ,  H01S5/042 ,  H01S5/20 ,  H01S5/24 ,  H01S5/32

CPC分类号： H01L33/24 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02587 ,  H01L31/0236 ,  H01L33/007 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/2231 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S2301/18 ,  H01S2304/12 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).

摘要翻译： 本文描述了一种光电半导体芯片（1），其包括含有至少一个第一氮化物化合物半导体材料的非平面生长层（2）和包含至少一个第二氮化物化合物半导体 并且布置在生长层（2）上，并且在生长表面（3）上布置有包括结构元件（4）的生长层（2）的布置在活性区（5）上的顶层（7） 面向活动区域（5）。

公开(公告)号：US09379522B1

公开(公告)日：2016-06-28

申请号：US14444687

申请日：2014-07-28

申请人： Soraa Laser Diode, Inc.

发明人： James W. Raring ,  Christiane Poblenz Elsass

IPC分类号： H01L21/00 ,  H01S5/343 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/12 ,  H01S5/34 ,  H01S5/10

CPC分类号： H01S5/34333 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3406 ,  H01S5/34346

摘要： An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

摘要翻译： 光学装置具有包含表面区域和应变控制区域的含有氮化镓和氮的衬底，所述应变控制区域被配置为将量子阱区域保持在预定的应变状态。 该装置还具有覆盖在应变控制区域上的多个量子阱区域。

公开(公告)号：US09270083B2

公开(公告)日：2016-02-23

申请号：US14698759

申请日：2015-04-28

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/00 ,  H01S5/187 ,  H01L31/0352 ,  H01S5/22 ,  H01S5/32 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/34 ,  H01S5/227

CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US09231377B2

公开(公告)日：2016-01-05

申请号：US14575071

申请日：2014-12-18

申请人： Seiko Epson Corporation

发明人： Yasutaka Imai

IPC分类号： H01S5/00 ,  H01S5/42

CPC分类号： H01S5/42 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/18355 ,  H01S5/3201 ,  H01S2301/176

摘要： A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated by the active layer, and an angle formed by a side surface of the first distortion imparting portion and an upper surface of the substrate, and an angle formed by a side surface of the second distortion imparting portion and the upper surface of the substrate are greater than an angle formed by a side surface of the resonance portion and the upper surface of the substrate.

摘要翻译： 垂直腔表面发射激光器包括：衬底; 以及设置在所述基板上的层叠体，其中，所述层叠体包括第一镜面层，有源层和第二镜面层，在俯视图中，所述层叠体包括第一变形赋予部，第二变形赋予 所述谐振部分设置在所述第一变形赋予部分和所述第二变形赋予部分之间并且谐振由所述有源层产生的光，并且由所述第一变形赋予部分的侧表面和所述第一变形赋予部分的上表面形成的角度 基板，并且由第二变形赋予部分的侧表面和基板的上表面形成的角度大于由共振部分的侧表面和基板的上表面形成的角度。

公开(公告)号：US20150249320A1

公开(公告)日：2015-09-03

申请号：US14698759

申请日：2015-04-28

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/187 ,  H01S5/34 ,  H01S5/125 ,  H01S5/32 ,  H01S5/22

CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

摘要翻译： 提供拉伸应变锗，其可以被充分应变以提供几乎直接的带隙材料或直接带隙材料。 与锗区接触的压应力或拉应力应力源材料在锗区域引起单轴或双轴拉伸应变。 应力材料可以包括氮化硅或硅锗。 所得到的应变锗结构可用于发射或检测光子，包括例如在谐振腔内产生光子以提供激光。

公开(公告)号：US20150229104A1

公开(公告)日：2015-08-13

申请号：US14688746

申请日：2015-04-16

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Toru TAKAYAMA

IPC分类号： H01S5/343 ,  H01S5/22 ,  H01S5/34 ,  H01S5/02 ,  H01S5/30

CPC分类号： H01S5/34333 ,  H01S5/0206 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3201 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/3407 ,  H01S2301/173

摘要： A semiconductor light emitting element includes a substrate including GaN, a first cladding layer provided over the substrate, a quantum well active layer provided over the first cladding layer, a second cladding layer provided over the quantum well active layer, and a first refractive index correction layer provided between the substrate and the first cladding layer. The first refractive index correction layer includes a layer of In1-x-yAlyGaxN (where x+y 1, x/1.13+y/0.49>1, or x/1.54+y/0.24>1, and the relations x/0.91+y/0.75≧1 and x/1.08+y/0.91≦1.

摘要翻译： 半导体发光元件包括：包括GaN的衬底;设置在衬底上的第一覆盖层，设置在第一覆盖层上的量子阱有源层;设置在量子阱有源层上的第二覆层;以及第一折射率校正 层，设置在基板和第一包层之间。 第一折射率校正层包括In1-x-yAlyGaxN（其中x + y <1），x和y满足关系x / 1.05 + y / 0.69> 1，x / 1.13 + y / 0.49> 1 ，或x / 1.54 + y / 0.24> 1，关系x / 0.91 + y /0.75≥1和x / 1.08 + y / 0.91＆nlE; 1。