公开(公告)号：US06362495B1

公开(公告)日：2002-03-26

申请号：US09264156

申请日：1999-03-05

申请人： Kipp J. Schoen ,  Jason P. Henning ,  Jerry M. Woodall ,  James A. Cooper, Jr. ,  Michael R. Melloch

发明人： Kipp J. Schoen ,  Jason P. Henning ,  Jerry M. Woodall ,  James A. Cooper, Jr. ,  Michael R. Melloch

IPC分类号： H01L310312

CPC分类号： H01L29/1608 ,  H01L29/47 ,  H01L29/872 ,  H01L31/0312

摘要： A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a mesa defined between adjacent ones of the trenches, and a Schottky contact having a relatively high barrier height at the bottom of each trench. The same metal used for the Schottky contact in each trench is deposited over the Schottky contact on the mesa. A simplified fabrication process is disclosed in which the high barrier height metal is deposited over the low barrier height metal and then used as an etch mask for reactive ion etching of the trenches to produce a self-aligned low barrier contact.

摘要翻译： 一种双金属沟槽碳化硅肖特基压紧整流器，其具有形成在n型SiC衬底中的多个沟槽，肖特基接触在相邻沟槽之间限定的台面上具有相对较低的势垒高度，以及肖特基接触 在每个沟槽的底部具有较高的势垒高度。 在每个沟槽中用于肖特基接触的相同金属沉积在台面上的肖特基接触件上。 公开了一种简化的制造工艺，其中高阻挡高度金属沉积在低阻挡高度金属上，然后用作蚀刻掩模以用于沟槽的反应离子蚀刻以产生自对准低阻挡接触。