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1.发明申请Copolymer For Semiconductor Lithography And Producing Method Thereof, And Composition 有权半导体光刻用共聚物及其制备方法及组成公开(公告)号：US20080114139A1
公开(公告)日：2008-05-15
申请号：US11587592
申请日：2005-04-28
IPC分类号： C08F28/02
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译： 为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低 控制分子量区域，并提供其制造方法。 根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时， 该对象可以实现。
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2.发明申请COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PRODUCING METHOD THEREOF, AND COMPOSITION 审中-公开用于半导体光刻的共聚物及其制备方法及组合物公开(公告)号：US20100324245A1
公开(公告)日：2010-12-23
申请号：US12872461
申请日：2010-08-31
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译： 为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低 控制分子量区域，并提供其制造方法。 根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时， 该对象可以实现。
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3.发明授权Copolymer for semiconductor lithography and producing method thereof, and composition 有权半导体光刻用共聚物及其制造方法及组成公开(公告)号：US07910282B2
公开(公告)日：2011-03-22
申请号：US11587592
申请日：2005-04-28
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译： 为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低 控制分子量区域，并提供其制造方法。 根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时， 该对象可以实现。
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