公开(公告)号：US06466373B1

公开(公告)日：2002-10-15

申请号：US09677321

申请日：2000-09-29

Applicant: Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

Inventor： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

IPC: G02B2700

CPC classification number: G03F1/29 ,  G03F1/32 ,  G03F1/34 ,  G03F1/70 ,  G03F7/2026 ,  G03F7/70466

Abstract: For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

Abstract translation: 为了在半导体制造中以小于曝光波长的方式平版印刷产生最小结构，使用厚相位掩模和修剪掩模进行双重曝光，修整掩模进一步构成由相位掩模产生的相位对比线。 除了透明或不透明区域之外，修整掩模还具有相移区域。 这些环绕着修整掩模的透明区域，由第一掩模产生的相位对应线通过该区域被局部再暴露，也就是说被中断。 通过在第二掩模上添加相移部分透明区域，连续线段的强度分布特别丰富; 可以减少线路部分之间的距离。 因此，修剪面罩，否则仅用于较大的结构，因此适用于最精细的尺寸关键结构的构造。